Биполярный транзистор MSD1819A-RT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MSD1819A-RT1G
Маркировка: ZR
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 210
Корпус транзистора: SOT323
Аналоги (замена) для MSD1819A-RT1G
MSD1819A-RT1G Datasheet (PDF)
msd1819a-rt1g nsvmsd1819a-rt1g.pdf
MSD1819A-RT1G,NSVMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mountwww.onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYLE
msd1819a-rt1g.pdf
MSD1819A-RT1G,SMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mounthttp://onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYL
lmsd1819a-rt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose AmplifierTransistorLMSD1819A-RT1GS-LMSD1819A-RT1GNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in the3SC-70/SOT-323 package which is designed for low power surfacemount applications.1Features2 High hFE, 210-460 Low VCE
msd1819a-rt1-d.pdf
MSD1819A--RT1General Purpose AmplifierTransistorNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalhttp://onsemi.compurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfaceCOLLECTORmount applications.3Features High hFE, 210 -- 460 Low VCE(sat),
msd1819a-r.pdf
MSD1819A-RT1G,SMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mounthttp://onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYL
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050