MSD1819A-RT1G - аналоги и даташиты биполярного транзистора

 

MSD1819A-RT1G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: MSD1819A-RT1G
   Маркировка: ZR
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 210
   Корпус транзистора: SOT323

 Аналоги (замена) для MSD1819A-RT1G

 

MSD1819A-RT1G Datasheet (PDF)

 ..1. Size:57K  onsemi
 msd1819a-rt1g nsvmsd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

MSD1819A-RT1G, NSVMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount www.onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYLE

 ..2. Size:100K  onsemi
 msd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http //onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYL

 0.1. Size:90K  lrc
 lmsd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor LMSD1819A-RT1G S-LMSD1819A-RT1G NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the 3 SC-70/SOT-323 package which is designed for low power surface mount applications. 1 Features 2 High hFE, 210-460 Low VCE

 2.1. Size:209K  onsemi
 msd1819a-rt1-d.pdf pdf_icon

MSD1819A-RT1G

MSD1819A--RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general http //onsemi.com purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface COLLECTOR mount applications. 3 Features High hFE, 210 -- 460 Low VCE(sat),

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Другие транзисторы... MSB1218A-RT1 , MSB1218A-RT1G , MSB92ASWT1G , MSB92AWT1G , MSB92T1G , MSB92WT1G , MSC2712GT1G , MSD1819A-R , BD335 , MSD42 , MSD42SWT1G , MSD42T1G , MSD42WT1G , MSD601-R , MSD601-RT1G , MSD602-RT1 , MSD602-RT1G .

 

 
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