MSD1819A-RT1G datasheet, аналоги, основные параметры

Наименование производителя: MSD1819A-RT1G  📄📄 

Маркировка: ZR

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 210

Корпус транзистора: SOT323

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MSD1819A-RT1G даташит

 ..1. Size:57K  onsemi
 msd1819a-rt1g nsvmsd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

MSD1819A-RT1G, NSVMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount www.onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYLE

 ..2. Size:100K  onsemi
 msd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http //onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYL

 0.1. Size:90K  lrc
 lmsd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor LMSD1819A-RT1G S-LMSD1819A-RT1G NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the 3 SC-70/SOT-323 package which is designed for low power surface mount applications. 1 Features 2 High hFE, 210-460 Low VCE

 2.1. Size:209K  onsemi
 msd1819a-rt1-d.pdf pdf_icon

MSD1819A-RT1G

MSD1819A--RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general http //onsemi.com purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface COLLECTOR mount applications. 3 Features High hFE, 210 -- 460 Low VCE(sat),

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MSB1218A-RT1, MSB1218A-RT1G, MSB92ASWT1G, MSB92AWT1G, MSB92T1G, MSB92WT1G, MSC2712GT1G, MSD1819A-R, BD335, MSD42, MSD42SWT1G, MSD42T1G, MSD42WT1G, MSD601-R, MSD601-RT1G, MSD602-RT1, MSD602-RT1G