All Transistors. MSD1819A-RT1G Datasheet

 

MSD1819A-RT1G Datasheet and Replacement


   Type Designator: MSD1819A-RT1G
   SMD Transistor Code: ZR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SOT323
 

 MSD1819A-RT1G Substitution

   - BJT ⓘ Cross-Reference Search

   

MSD1819A-RT1G Datasheet (PDF)

 ..1. Size:57K  onsemi
msd1819a-rt1g nsvmsd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

MSD1819A-RT1G,NSVMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mountwww.onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYLE

 ..2. Size:100K  onsemi
msd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

MSD1819A-RT1G,SMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mounthttp://onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYL

 0.1. Size:90K  lrc
lmsd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

LESHAN RADIO COMPANY, LTD.General Purpose AmplifierTransistorLMSD1819A-RT1GS-LMSD1819A-RT1GNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in the3SC-70/SOT-323 package which is designed for low power surfacemount applications.1Features2 High hFE, 210-460 Low VCE

 2.1. Size:209K  onsemi
msd1819a-rt1-d.pdf pdf_icon

MSD1819A-RT1G

MSD1819A--RT1General Purpose AmplifierTransistorNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalhttp://onsemi.compurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfaceCOLLECTORmount applications.3Features High hFE, 210 -- 460 Low VCE(sat),

Datasheet: MSB1218A-RT1 , MSB1218A-RT1G , MSB92ASWT1G , MSB92AWT1G , MSB92T1G , MSB92WT1G , MSC2712GT1G , MSD1819A-R , TIP35C , MSD42 , MSD42SWT1G , MSD42T1G , MSD42WT1G , MSD601-R , MSD601-RT1G , MSD602-RT1 , MSD602-RT1G .

History: DTC143ZUB | 2SA949Y | 2SC3421O | BC858B | MSD602-RT1G

Keywords - MSD1819A-RT1G transistor datasheet

 MSD1819A-RT1G cross reference
 MSD1819A-RT1G equivalent finder
 MSD1819A-RT1G lookup
 MSD1819A-RT1G substitution
 MSD1819A-RT1G replacement

 

 
Back to Top

 


 
.