MSD1819A-RT1G Datasheet and Replacement
Type Designator: MSD1819A-RT1G
SMD Transistor Code: ZR
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: SOT323
MSD1819A-RT1G Substitution
MSD1819A-RT1G Datasheet (PDF)
msd1819a-rt1g nsvmsd1819a-rt1g.pdf

MSD1819A-RT1G,NSVMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mountwww.onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYLE
msd1819a-rt1g.pdf

MSD1819A-RT1G,SMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mounthttp://onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYL
lmsd1819a-rt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose AmplifierTransistorLMSD1819A-RT1GS-LMSD1819A-RT1GNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in the3SC-70/SOT-323 package which is designed for low power surfacemount applications.1Features2 High hFE, 210-460 Low VCE
msd1819a-rt1-d.pdf

MSD1819A--RT1General Purpose AmplifierTransistorNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalhttp://onsemi.compurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfaceCOLLECTORmount applications.3Features High hFE, 210 -- 460 Low VCE(sat),
Datasheet: MSB1218A-RT1 , MSB1218A-RT1G , MSB92ASWT1G , MSB92AWT1G , MSB92T1G , MSB92WT1G , MSC2712GT1G , MSD1819A-R , TIP35C , MSD42 , MSD42SWT1G , MSD42T1G , MSD42WT1G , MSD601-R , MSD601-RT1G , MSD602-RT1 , MSD602-RT1G .
History: DTC143ZUB | 2SA949Y | 2SC3421O | BC858B | MSD602-RT1G
Keywords - MSD1819A-RT1G transistor datasheet
MSD1819A-RT1G cross reference
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History: DTC143ZUB | 2SA949Y | 2SC3421O | BC858B | MSD602-RT1G



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