MSG36C42 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG36C42
Código: 6F
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.13 W
Tensión colector-base (Vcb): 9 V
Tensión colector-emisor (Vce): 6 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.06 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 16000 MHz
Capacitancia de salida (Cc): 0.7 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SSSMINI6F1
Búsqueda de reemplazo de transistor bipolar MSG36C42
MSG36C42 Datasheet (PDF)
msg36c42.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MSG36C42SiGe HBT typeFor low-noise RF amplifier Features Package Compatible between high breakdown voltage and high cutoff frequency Code Low-noise, high-gain amplification SSSMini6-F1 Two elements incorporated into one package (Each transistor is separated) Pin Name SSSMini type package,
msg36d42.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG36D42SiGe HBT typeFor low-noise RF amplifierUnit: mm0.12+0.03 Features-0.026 5 4 Compatible between high breakdown voltage and high cutoff frequency0 to 0.02 Low-noise, high-gain amplification Two elements incorporated into one package (Each
msg36e31.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG36E31SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cut-off frequency0.12+0.03 -0.026 5 4 Low noise, high-gain amplification Two elements incorporated into one package (Each transistor is separated) 0 to 0.02 Reduction
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC141 | BC818K-40 | 2N5050
History: 2SC141 | BC818K-40 | 2N5050
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050