MSG36C42 Todos los transistores

 

MSG36C42 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSG36C42
   Código: 6F
   Material: SiGe
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.13 W
   Tensión colector-base (Vcb): 9 V
   Tensión colector-emisor (Vce): 6 V
   Tensión emisor-base (Veb): 1 V
   Corriente del colector DC máxima (Ic): 0.06 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 16000 MHz
   Capacitancia de salida (Cc): 0.7 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SSSMINI6F1
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MSG36C42 Datasheet (PDF)

 ..1. Size:320K  panasonic
 msg36c42.pdf pdf_icon

MSG36C42

This product complies with the RoHS Directive (EU 2002/95/EC).MSG36C42SiGe HBT typeFor low-noise RF amplifier Features Package Compatible between high breakdown voltage and high cutoff frequency Code Low-noise, high-gain amplification SSSMini6-F1 Two elements incorporated into one package (Each transistor is separated) Pin Name SSSMini type package,

 9.1. Size:709K  panasonic
 msg36d42.pdf pdf_icon

MSG36C42

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG36D42SiGe HBT typeFor low-noise RF amplifierUnit: mm0.12+0.03 Features-0.026 5 4 Compatible between high breakdown voltage and high cutoff frequency0 to 0.02 Low-noise, high-gain amplification Two elements incorporated into one package (Each

 9.2. Size:246K  panasonic
 msg36e31.pdf pdf_icon

MSG36C42

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG36E31SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cut-off frequency0.12+0.03 -0.026 5 4 Low noise, high-gain amplification Two elements incorporated into one package (Each transistor is separated) 0 to 0.02 Reduction

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History: ZTX302M | NSVF4009SG4

 

 
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