All Transistors. MSG36C42 Datasheet

 

MSG36C42 Datasheet and Replacement


   Type Designator: MSG36C42
   SMD Transistor Code: 6F
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.13 W
   Maximum Collector-Base Voltage |Vcb|: 9 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.06 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 16000 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SSSMINI6F1
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MSG36C42 Datasheet (PDF)

 ..1. Size:320K  panasonic
 msg36c42.pdf pdf_icon

MSG36C42

This product complies with the RoHS Directive (EU 2002/95/EC).MSG36C42SiGe HBT typeFor low-noise RF amplifier Features Package Compatible between high breakdown voltage and high cutoff frequency Code Low-noise, high-gain amplification SSSMini6-F1 Two elements incorporated into one package (Each transistor is separated) Pin Name SSSMini type package,

 9.1. Size:709K  panasonic
 msg36d42.pdf pdf_icon

MSG36C42

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG36D42SiGe HBT typeFor low-noise RF amplifierUnit: mm0.12+0.03 Features-0.026 5 4 Compatible between high breakdown voltage and high cutoff frequency0 to 0.02 Low-noise, high-gain amplification Two elements incorporated into one package (Each

 9.2. Size:246K  panasonic
 msg36e31.pdf pdf_icon

MSG36C42

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG36E31SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cut-off frequency0.12+0.03 -0.026 5 4 Low noise, high-gain amplification Two elements incorporated into one package (Each transistor is separated) 0 to 0.02 Reduction

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History: RN1909 | 40366S | 2SA495GR | 3DD4244DM | 3CG298 | NTE2547 | KTC9018S

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