MSG36E41 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG36E41
Código: 6D
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.13 W
Tensión colector-base (Vcb): 9 V
Tensión colector-emisor (Vce): 6 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 17000 MHz
Capacitancia de salida (Cc): 0.6 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SSSMINI6F1
Búsqueda de reemplazo de transistor bipolar MSG36E41
MSG36E41 Datasheet (PDF)
msg36e31.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG36E31SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cut-off frequency0.12+0.03 -0.026 5 4 Low noise, high-gain amplification Two elements incorporated into one package (Each transistor is separated) 0 to 0.02 Reduction
msg36c42.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MSG36C42SiGe HBT typeFor low-noise RF amplifier Features Package Compatible between high breakdown voltage and high cutoff frequency Code Low-noise, high-gain amplification SSSMini6-F1 Two elements incorporated into one package (Each transistor is separated) Pin Name SSSMini type package,
msg36d42.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG36D42SiGe HBT typeFor low-noise RF amplifierUnit: mm0.12+0.03 Features-0.026 5 4 Compatible between high breakdown voltage and high cutoff frequency0 to 0.02 Low-noise, high-gain amplification Two elements incorporated into one package (Each
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: KT501D | 2N864A | 2N1554A
History: KT501D | 2N864A | 2N1554A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050