MSG36E41 Datasheet. Specs and Replacement
Type Designator: MSG36E41 📄📄
SMD Transistor Code: 6D
Material of Transistor: SiGe
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.13 W
Maximum Collector-Base Voltage |Vcb|: 9 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 17000 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SSSMINI6F1
MSG36E41 Substitution
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MSG36E41 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG36E31 SiGe HBT type For low-noise RF amplifier Unit mm Features Compatible between high breakdown voltage and high cut-off frequency 0.12+0.03 -0.02 6 5 4 Low noise, high-gain amplification Two elements incorporated into one package (Each transistor is separated) 0 to 0.02 Reduction ... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). MSG36C42 SiGe HBT type For low-noise RF amplifier Features Package Compatible between high breakdown voltage and high cutoff frequency Code Low-noise, high-gain amplification SSSMini6-F1 Two elements incorporated into one package (Each transistor is separated) Pin Name SSSMini type package,... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG36D42 SiGe HBT type For low-noise RF amplifier Unit mm 0.12+0.03 Features -0.02 6 5 4 Compatible between high breakdown voltage and high cutoff frequency 0 to 0.02 Low-noise, high-gain amplification Two elements incorporated into one package (Each... See More ⇒
Detailed specifications: MSD42WT1G, MSD601-R, MSD601-RT1G, MSD602-RT1, MSD602-RT1G, MSG36C42, MSG36D42, MSG36E31, 2SD2499, MSG43001, MSG43002, MSG43003, MSG43004, MSG430C4, MSG430D4, MT3S106FS, MT3S111
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