MSG430C4 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSG430C4  📄📄 

Código: 6C

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 9 V

Tensión colector-emisor (Vce): 6 V

Tensión emisor-base (Veb): 1 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 16000 MHz

Capacitancia de salida (Cc): 0.8 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: ML3N2

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MSG430C4 datasheet

 ..1. Size:519K  panasonic
 msg430c4.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit mm Features Compatible between high breakdown voltage and high cutoff frequency 3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1 Ultra

 8.1. Size:202K  panasonic
 msg43002.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43002 SiGe HBT type For low-noise RF amplifier Unit mm Features 3 2 Compatible between high breakdown voltage and high cutoff fre- quency 1 0.39+0.01 Low-noise, high-gain amplification 1.00 0.05 -0.03 Suitable for high-density mounting and downsizing of the equip- 0.25 0.05 0.25 0.05

 8.2. Size:204K  panasonic
 msg43004.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG43004 SiGe HBT type For low-noise RF amplifier Unit mm 3 2 Features Compatible between high breakdown voltage and high cut-off frequency 1 Low noise, high-gain amplification 0.39+0.01 1.00 0.05 -0.03 Optimal size reduction and high level integration for ultra-small packages 0.25 0.05 0

 8.3. Size:527K  panasonic
 msg430d4.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors MSG430D4 SiGe HBT type For low-noise RF amplifier Unit mm Features Compatible between high breakdown voltage and high cutoff frequency 3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1 Ultr

MOSTRAR MÁS

Otros transistores... MSG36C42, MSG36D42, MSG36E31, MSG36E41, MSG43001, MSG43002, MSG43003, MSG43004, TIP42, MSG430D4, MT3S106FS, MT3S111, MT3S111P, MT3S111TU, MT3S113, MT3S113P, MT3S113TU