MSG430C4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG430C4
Código: 6C
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 9 V
Tensión colector-emisor (Vce): 6 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 16000 MHz
Capacitancia de salida (Cc): 0.8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: ML3N2
Búsqueda de reemplazo de MSG430C4
MSG430C4 Datasheet (PDF)
msg430c4.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG430C4SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1Ultra
msg43002.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43002SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05
msg43004.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43004SiGe HBT typeFor low-noise RF amplifierUnit: mm3 2 Features Compatible between high breakdown voltage and high cut-off frequency1 Low noise, high-gain amplification0.39+0.011.000.05 -0.03 Optimal size reduction and high level integration for ultra-small packages0.250.05 0
msg430d4.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG430D4SiGe HBT typeFor low-noise RF amplifierUnit : mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1Ultr
Otros transistores... MSG36C42 , MSG36D42 , MSG36E31 , MSG36E41 , MSG43001 , MSG43002 , MSG43003 , MSG43004 , TIP127 , MSG430D4 , MT3S106FS , MT3S111 , MT3S111P , MT3S111TU , MT3S113 , MT3S113P , MT3S113TU .
History: 2SC621A | 2SD556 | 2SC3416E | MRF427
History: 2SC621A | 2SD556 | 2SC3416E | MRF427



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