MSG430C4 Todos los transistores

 

MSG430C4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSG430C4
   Código: 6C
   Material: SiGe
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 9 V
   Tensión colector-emisor (Vce): 6 V
   Tensión emisor-base (Veb): 1 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 16000 MHz
   Capacitancia de salida (Cc): 0.8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: ML3N2
     - Selección de transistores por parámetros

 

MSG430C4 Datasheet (PDF)

 ..1. Size:519K  panasonic
msg430c4.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG430C4SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1Ultra

 8.1. Size:202K  panasonic
msg43002.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43002SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

 8.2. Size:204K  panasonic
msg43004.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43004SiGe HBT typeFor low-noise RF amplifierUnit: mm3 2 Features Compatible between high breakdown voltage and high cut-off frequency1 Low noise, high-gain amplification0.39+0.011.000.05 -0.03 Optimal size reduction and high level integration for ultra-small packages0.250.05 0

 8.3. Size:527K  panasonic
msg430d4.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG430D4SiGe HBT typeFor low-noise RF amplifierUnit : mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1Ultr

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BFR64 | MRF321 | 40TA045D | BF253-2 | BFG520-X | HSE3003 | MJ16002

 

 
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