All Transistors. MSG430C4 Datasheet

 

MSG430C4 Datasheet and Replacement


   Type Designator: MSG430C4
   SMD Transistor Code: 6C
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 9 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 16000 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: ML3N2
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MSG430C4 Datasheet (PDF)

 ..1. Size:519K  panasonic
 msg430c4.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG430C4SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1Ultra

 8.1. Size:202K  panasonic
 msg43002.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43002SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

 8.2. Size:204K  panasonic
 msg43004.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43004SiGe HBT typeFor low-noise RF amplifierUnit: mm3 2 Features Compatible between high breakdown voltage and high cut-off frequency1 Low noise, high-gain amplification0.39+0.011.000.05 -0.03 Optimal size reduction and high level integration for ultra-small packages0.250.05 0

 8.3. Size:527K  panasonic
 msg430d4.pdf pdf_icon

MSG430C4

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG430D4SiGe HBT typeFor low-noise RF amplifierUnit : mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1Ultr

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