Биполярный транзистор MSG430C4 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MSG430C4
Маркировка: 6C
Тип материала: SiGe
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 9 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 6 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 16000 MHz
Ёмкость коллекторного перехода (Cc): 0.8 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: ML3N2
MSG430C4 Datasheet (PDF)
msg430c4.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG430C4SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1Ultra
msg43002.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43002SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05
msg43004.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43004SiGe HBT typeFor low-noise RF amplifierUnit: mm3 2 Features Compatible between high breakdown voltage and high cut-off frequency1 Low noise, high-gain amplification0.39+0.011.000.05 -0.03 Optimal size reduction and high level integration for ultra-small packages0.250.05 0
msg430d4.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG430D4SiGe HBT typeFor low-noise RF amplifierUnit : mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Optimum for high-density mounting and downsizing of the equipment for 1Ultr
msg43003.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG43003SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for 1Ultraminiature package 0.6 mm 1.0 mm (hei
msg43001.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43001SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050