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MT3S113TU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MT3S113TU
   Código: R7
   Material: SiGe
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-emisor (Vce): 5.3 V
   Tensión emisor-base (Veb): 0.6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 11200 MHz
   Capacitancia de salida (Cc): 1.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: 2-2U1B
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MT3S113TU Datasheet (PDF)

 ..1. Size:176K  toshiba
mt3s113tu.pdf pdf_icon

MT3S113TU

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base2. 2. EmitterR 7 3. 3

 ..2. Size:178K  toshiba
mt3s113tu .pdf pdf_icon

MT3S113TU

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base2. 2. EmitterR 7 3. 3

 7.1. Size:201K  toshiba
mt3s113.pdf pdf_icon

MT3S113TU

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base2. Emitter3. CollectorS-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C)

 7.2. Size:203K  toshiba
mt3s113 .pdf pdf_icon

MT3S113TU

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base2. Emitter3. CollectorS-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C)

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: SA2919 | 2SC1757E | MP4051 | D43C8 | ZTX503M | CPH5520 | 2SC1727

 

 
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