MT3S113TU Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MT3S113TU Datasheet. Specs and Replacement

Type Designator: MT3S113TU 📄📄

SMD Transistor Code: R7

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Emitter Voltage |Vce|: 5.3 V

Maximum Emitter-Base Voltage |Veb|: 0.6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 11200 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: 2-2U1B

MT3S113TU Substitution

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MT3S113TU datasheet

..1. Size:176K toshiba

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MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain S21e 2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base 2. 2. Emitter R 7 3. 3... See More ⇒

..2. Size:178K toshiba

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7.1. Size:201K toshiba

mt3s113.pdf pdf_icon

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) ... See More ⇒

7.2. Size:203K toshiba

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