MP4304
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP4304
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.2
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 85
MHz
Capacitancia de salida (Cc): 50
pF
Ganancia de corriente contínua (hfe): 600
Paquete / Cubierta: 2-32C1B
Búsqueda de reemplazo de transistor bipolar MP4304
MP4304
Datasheet (PDF)
..1. Size:128K toshiba
mp4304.pdf 
MP4304 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) MP4304 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
9.1. Size:141K toshiba
mp4305.pdf
MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4305 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
9.2. Size:174K toshiba
mp4301 .pdf
MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistor in One) MP4301 High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25C) High collector curren
9.3. Size:135K toshiba
mp4303.pdf
MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4303 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
9.4. Size:181K toshiba
mp4305 .pdf
MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4305 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25C)
9.5. Size:174K toshiba
mp4303 .pdf
MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4303 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pins) High collector power dissipation (4-device operation) : PT = 4.4 W (Ta = 25C)
9.6. Size:136K toshiba
mp4301.pdf
MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4301 High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T High collector current:
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
