MP4304 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP4304
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.2 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 85 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 600
Paquete / Cubierta: 2-32C1B
Búsqueda de reemplazo de MP4304
MP4304 Datasheet (PDF)
mp4304.pdf

MP4304 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) MP4304 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
mp4305.pdf

MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4305 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
mp4301 .pdf

MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistor in One) MP4301 High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25C) High collector curren
mp4303.pdf

MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4303 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BD643 | 2SC3970A | SB2202 | 2SD1389 | 2N4929 | EMX1FHA | 2SD1387
History: BD643 | 2SC3970A | SB2202 | 2SD1389 | 2N4929 | EMX1FHA | 2SD1387



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
s9014 transistor | bc547 transistor datasheet | c945 datasheet | irfp260 | ksc2383 | 2n3773 | b772 transistor | 50n06