Биполярный транзистор MP4304 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MP4304
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 2.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 85 MHz
Ёмкость коллекторного перехода (Cc): 50 pf
Статический коэффициент передачи тока (hfe): 600
Корпус транзистора: 2-32C1B
MP4304 Datasheet (PDF)
mp4304.pdf
MP4304 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) MP4304 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
mp4305.pdf
MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4305 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
mp4301 .pdf
MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistor in One) MP4301 High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25C) High collector curren
mp4303.pdf
MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4303 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
mp4305 .pdf
MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4305 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25C)
mp4303 .pdf
MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4303 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pins) High collector power dissipation (4-device operation) : PT = 4.4 W (Ta = 25C)
mp4301.pdf
MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4301 High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T High collector current:
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MP4403 | CHDTA114WEGP
History: MP4403 | CHDTA114WEGP
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050