MP4304 Datasheet, Equivalent, Cross Reference Search
Type Designator: MP4304
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 85 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 600
Noise Figure, dB: -
Package: 2-32C1B
MP4304 Transistor Equivalent Substitute - Cross-Reference Search
MP4304 Datasheet (PDF)
1.1. mp4304.pdf 
Size:128K _update
MP4304 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) MP4304 Industrial Applications High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25°C) T
5.1. mp4303.pdf Size:135K _update
MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4303 Industrial Applications High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25°C) T
5.2. mp4301.pdf Size:136K _update
MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4301 High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25°C) T • High collector current:
5.3. mp4305.pdf Size:141K _update
MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4305 Industrial Applications High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25°C) T
5.4. mp4305 en wm 20061027.pdf Size:181K _toshiba
MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4305 Industrial Applications High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25°C)
5.5. mp4303 en wm 20061027.pdf Size:174K _toshiba
MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4303 Industrial Applications High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pins) • High collector power dissipation (4-device operation) : PT = 4.4 W (Ta = 25°C)
5.6. mp4301 en wm 20061027.pdf Size:174K _toshiba
MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistor in One) MP4301 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25°C) • High collector curren
Datasheet: D32P3 , D32P4 , D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , 2N2222 , D32S7 , D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 .
