All Transistors. MP4304 Datasheet

 

MP4304 Datasheet, Equivalent, Cross Reference Search

Type Designator: MP4304

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 2.2 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 85 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 600

Noise Figure, dB: -

Package: 2-32C1B

MP4304 Transistor Equivalent Substitute - Cross-Reference Search

 

MP4304 Datasheet (PDF)

1.1. mp4304.pdf Size:128K _update

MP4304
MP4304

MP4304 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) MP4304 Industrial Applications High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25°C) T

5.1. mp4303.pdf Size:135K _update

MP4304
MP4304

MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4303 Industrial Applications High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25°C) T

5.2. mp4301.pdf Size:136K _update

MP4304
MP4304

MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4301 High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25°C) T • High collector current:

 5.3. mp4305.pdf Size:141K _update

MP4304
MP4304

MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4305 Industrial Applications High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25°C) T

5.4. mp4305 en wm 20061027.pdf Size:181K _toshiba

MP4304
MP4304

MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4305 Industrial Applications High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25°C)

 5.5. mp4303 en wm 20061027.pdf Size:174K _toshiba

MP4304
MP4304

MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4303 Industrial Applications High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pins) • High collector power dissipation (4-device operation) : PT = 4.4 W (Ta = 25°C)

5.6. mp4301 en wm 20061027.pdf Size:174K _toshiba

MP4304
MP4304

MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistor in One) MP4301 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25°C) • High collector curren

Datasheet: D32P3 , D32P4 , D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , 2N2222 , D32S7 , D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 .

 
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