BD159G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD159G 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 375 V
Tensión colector-emisor (Vce): 350 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 15 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO225
📄📄 Copiar
Búsqueda de reemplazo de BD159G
- Selecciónⓘ de transistores por parámetros
BD159G datasheet
bd159g.pdf
BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http //onsemi.com Features Suitable for Transformerless, Line-Operated Equipment 0.5 AMPERE Thermopadt Construction Provides High Power Dissipation Rating POWER TRANSISTOR for High Reliability NPN SILICON
bd157 bd158 bd159.pdf
Order this document MOTOROLA by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 Plastic Medium Power NPN BD159 Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS Suitable for Transformerless, Line Operated Equipment NPN SILICON Thermopad Construction Provides
bd157 bd158 bd159.pdf
BD157/158/159 Low Power Fast Switching Output Stages For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD157 275 V BD158 325 V BD159 375 V VCEO Collector-Emitter Voltage BD157 250 V BD158 300
bd159-d.pdf
BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http //onsemi.com Features Suitable for Transformerless, Line-Operated Equipment 0.5 AMPERE Thermopadt Construction Provides High Power Dissipation Rating POWER TRANSISTOR for High Reliability NPN SILICON
Otros transistores... MPQ6002, MPQ6100A, MPQ6502, MPQ6700, MPQ7043, MPQ7053, MPQ7093, BD135TG, 2N3906, BD179G, BD180G, BD241CG, BD242BG, BD242CG, BD243CG, BD244BG, BD244CG
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n2907a datasheet | irfz24n | bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet




