BD159G Datasheet, Equivalent, Cross Reference Search
Type Designator: BD159G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 375 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO225
BD159G Transistor Equivalent Substitute - Cross-Reference Search
BD159G Datasheet (PDF)
bd159g.pdf
BD159Plastic Medium PowerNPN Silicon TransistorThis device is designed for power output stages for television, radio,phonograph and other consumer product applications.http://onsemi.comFeatures Suitable for Transformerless, Line-Operated Equipment0.5 AMPERE Thermopadt Construction Provides High Power Dissipation RatingPOWER TRANSISTORfor High ReliabilityNPN SILICON
bd157 bd158 bd159.pdf
Order this documentMOTOROLAby BD157/DSEMICONDUCTOR TECHNICAL DATABD157BD158Plastic Medium Power NPNBD159Silicon Transistor. . . designed for power output stages for television, radio, phonograph and otherconsumer product applications. 0.5 AMPEREPOWER TRANSISTORS Suitable for Transformerless, LineOperated EquipmentNPN SILICON Thermopad{ Construction Provides
bd157 bd158 bd159.pdf
BD157/158/159Low Power Fast Switching Output Stages For T.V Radio Audio Output AmplifiersTO-12611. Emitter 2.Collector 3.BaseNPN Epitxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD157 275 V : BD158 325 V : BD159 375 V VCEO Collector-Emitter Voltage : BD157 250 V : BD158 300
bd159-d.pdf
BD159Plastic Medium PowerNPN Silicon TransistorThis device is designed for power output stages for television, radio,phonograph and other consumer product applications.http://onsemi.comFeatures Suitable for Transformerless, Line-Operated Equipment0.5 AMPERE Thermopadt Construction Provides High Power Dissipation RatingPOWER TRANSISTORfor High ReliabilityNPN SILICON
bd159.pdf
isc Silicon NPN Power Transistor BD159DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)DC Current Gain-: h = 30~240(Min) @ I = 50mAFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power output stages for television, radio,phonograph and other consumer product applications.ABSOL
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
