All Transistors. BD159G Datasheet

 

BD159G Datasheet, Equivalent, Cross Reference Search

Type Designator: BD159G

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 375 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO225

BD159G Transistor Equivalent Substitute - Cross-Reference Search

 

BD159G Datasheet (PDF)

1.1. bd159g.pdf Size:56K _update

BD159G
BD159G

BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http://onsemi.com Features • Suitable for Transformerless, Line-Operated Equipment 0.5 AMPERE • Thermopadt Construction Provides High Power Dissipation Rating POWER TRANSISTOR for High Reliability NPN SILICON

5.1. bd157 bd158 bd159.pdf Size:100K _motorola

BD159G
BD159G

Order this document MOTOROLA by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 Plastic Medium Power NPN BD159 Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS Suitable for Transformerless, LineOperated Equipment NPN SILICON Thermopad{ Construction Provides High Powe

5.2. bd157 bd158 bd159.pdf Size:38K _fairchild_semi

BD159G
BD159G

BD157/158/159 Low Power Fast Switching Output Stages For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD157 275 V : BD158 325 V : BD159 375 V VCEO Collector-Emitter Voltage : BD157 250 V : BD158 300 V :

 5.3. bd159-d.pdf Size:56K _onsemi

BD159G
BD159G

BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http://onsemi.com Features Suitable for Transformerless, Line-Operated Equipment 0.5 AMPERE Thermopadt Construction Provides High Power Dissipation Rating POWER TRANSISTOR for High Reliability NPN SILICON Pb-

5.4. bd159.pdf Size:247K _inchange_semiconductor

BD159G
BD159G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD159 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA APPLICATIONS ·Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL P

Datasheet: MPQ6002 , MPQ6100A , MPQ6502 , MPQ6700 , MPQ7043 , MPQ7053 , MPQ7093 , BD135TG , BC549 , BD179G , BD180G , BD241CG , BD242BG , BD242CG , BD243CG , BD244BG , BD244CG .

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