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BD676G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD676G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO225

 Búsqueda de reemplazo de transistor bipolar BD676G

 

BD676G Datasheet (PDF)

 ..1. Size:102K  onsemi
bd676g.pdf

BD676G
BD676G

BD676, BD676A, BD678,BD678A, BD680, BD680A,BD682, BD682TPlastic Medium-PowerSilicon PNP Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon PNP Darlingtontransistors can be used as output devices in complementary4.0 AMP DARLINGTONgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesPNP SILICON High DC Current Gain -45, 60, 80, 100 V

 9.1. Size:110K  motorola
bd676 bd678 bd680 bd682.pdf

BD676G
BD676G

Order this documentMOTOROLAby BD676/DSEMICONDUCTOR TECHNICAL DATABD676BD676APlastic Medium-PowerBD678Silicon PNP DarlingtonsBD678A. . . for use as output devices in complementary generalpurpose amplifier applica-BD680tions. High DC Current Gain BD680AhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic ConstructionBD682 BD676, 676A, 678, 678A, 680

 9.2. Size:42K  fairchild semi
bd676a bd678a bd680a bd682.pdf

BD676G
BD676G

BD676A/678A/680A/682Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V

 9.3. Size:102K  onsemi
bd676ag.pdf

BD676G
BD676G

BD676, BD676A, BD678,BD678A, BD680, BD680A,BD682, BD682TPlastic Medium-PowerSilicon PNP Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon PNP Darlingtontransistors can be used as output devices in complementary4.0 AMP DARLINGTONgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesPNP SILICON High DC Current Gain -45, 60, 80, 100 V

 9.4. Size:159K  onsemi
bd676a bd678a bd680a bd682.pdf

BD676G
BD676G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:117K  cdil
bd676 bd678 bd680 bd682 bd684 a.pdf

BD676G
BD676G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676ABD678, 678ABD680, 680ABD682, 684TO126 Plastic PackageECBFor Use As Output Devices In Complementary General Purpose Amplifier Applications.COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683BD678, 678A, 680, 680A ARE E

 9.6. Size:189K  inchange semiconductor
bd676.pdf

BD676G
BD676G

isc Silicon PNP Darlington Power Transistor BD676DESCRIPTIONCollectorEmitter Breakdown Voltage: V = -45 V(BR)CEODC Current Gain: h = 750(Min) @ I = -1.5 AFE CComplement to Type BD675Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier

 9.7. Size:189K  inchange semiconductor
bd676a.pdf

BD676G
BD676G

isc Silicon PNP Darlington Power Transistor BD676ADESCRIPTIONCollectorEmitter Breakdown Voltage: V = -45 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE CComplement to Type BD675AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier

 9.8. Size:118K  inchange semiconductor
bd676a bd678a bd680a bd682.pdf

BD676G
BD676G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD676A/678A/680A/682 DESCRIPTION With TO-126 package Complement to type BD675A/677A/679A/681 DARLINGTON High DC current gain APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute

 9.9. Size:118K  inchange semiconductor
bd676 bd678 bd680.pdf

BD676G
BD676G

Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 DESCRIPTION With TO-126 package Complement to type BD675/BD677/BD679 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary generalpurpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

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