BD676G Datasheet. Specs and Replacement
Type Designator: BD676G 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO225
- BJT ⓘ Cross-Reference Search
BD676G datasheet
..1. Size:102K onsemi
bd676g.pdf 

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T Plastic Medium-Power Silicon PNP Darlingtons http //onsemi.com This series of plastic, medium-power silicon PNP Darlington transistors can be used as output devices in complementary 4.0 AMP DARLINGTON general-purpose amplifier applications. POWER TRANSISTORS Features PNP SILICON High DC Current Gain - 45, 60, 80, 100 V... See More ⇒
9.1. Size:110K motorola
bd676 bd678 bd680 bd682.pdf 

Order this document MOTOROLA by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A Plastic Medium-Power BD678 Silicon PNP Darlingtons BD678A . . . for use as output devices in complementary general purpose amplifier applica- BD680 tions. High DC Current Gain BD680A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD682 BD676, 676A, 678, 678A, 680... See More ⇒
9.2. Size:42K fairchild semi
bd676a bd678a bd680a bd682.pdf 

BD676A/678A/680A/682 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD676A - 45 V BD678A - 60 V ... See More ⇒
9.3. Size:102K onsemi
bd676ag.pdf 

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T Plastic Medium-Power Silicon PNP Darlingtons http //onsemi.com This series of plastic, medium-power silicon PNP Darlington transistors can be used as output devices in complementary 4.0 AMP DARLINGTON general-purpose amplifier applications. POWER TRANSISTORS Features PNP SILICON High DC Current Gain - 45, 60, 80, 100 V... See More ⇒
9.4. Size:159K onsemi
bd676a bd678a bd680a bd682.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.5. Size:117K cdil
bd676 bd678 bd680 bd682 bd684 a.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package E C B For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE E... See More ⇒
9.6. Size:189K inchange semiconductor
bd676.pdf 

isc Silicon PNP Darlington Power Transistor BD676 DESCRIPTION Collector Emitter Breakdown Voltage V = -45 V (BR)CEO DC Current Gain h = 750(Min) @ I = -1.5 A FE C Complement to Type BD675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier ... See More ⇒
9.7. Size:189K inchange semiconductor
bd676a.pdf 

isc Silicon PNP Darlington Power Transistor BD676A DESCRIPTION Collector Emitter Breakdown Voltage V = -45 V (BR)CEO DC Current Gain h = 750(Min) @ I = -2 A FE C Complement to Type BD675A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier ... See More ⇒
9.8. Size:118K inchange semiconductor
bd676a bd678a bd680a bd682.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD676A/678A/680A/682 DESCRIPTION With TO-126 package Complement to type BD675A/677A/679A/681 DARLINGTON High DC current gain APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute ... See More ⇒
9.9. Size:118K inchange semiconductor
bd676 bd678 bd680.pdf 

Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 DESCRIPTION With TO-126 package Complement to type BD675/BD677/BD679 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to ... See More ⇒
Detailed specifications: BD438G, BD439G, BD440G, BD441G, BD442G, BD675AG, BD675G, BD676AG, BD135, BD677AG, BD677G, BD678AG, BD678G, BD679AG, BD679G, BD680AG, BD680G
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