All Transistors. BD676G Datasheet

 

BD676G Datasheet, Equivalent, Cross Reference Search

Type Designator: BD676G

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO225

BD676G Transistor Equivalent Substitute - Cross-Reference Search

 

BD676G Datasheet (PDF)

1.1. bd676g.pdf Size:102K _update

BD676G
BD676G

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com This series of plastic, medium-power silicon PNP Darlington transistors can be used as output devices in complementary 4.0 AMP DARLINGTON general-purpose amplifier applications. POWER TRANSISTORS Features PNP SILICON • High DC Current Gain - 45, 60, 80, 100 V

5.1. bd676ag.pdf Size:102K _update

BD676G
BD676G

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com This series of plastic, medium-power silicon PNP Darlington transistors can be used as output devices in complementary 4.0 AMP DARLINGTON general-purpose amplifier applications. POWER TRANSISTORS Features PNP SILICON • High DC Current Gain - 45, 60, 80, 100 V

5.2. bd676 bd678 bd680 bd682.pdf Size:110K _motorola

BD676G
BD676G

Order this document MOTOROLA by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A Plastic Medium-Power BD678 Silicon PNP Darlingtons BD678A . . . for use as output devices in complementary generalpurpose amplifier applica- BD680 tions. High DC Current Gain BD680A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD682 BD676, 676A, 678, 678A, 680, 680A, 682 a

5.3. bd676a bd678a bd680a bd682.pdf Size:42K _fairchild_semi

BD676G
BD676G

BD676A/678A/680A/682 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V : BD68

5.4. bd676 bd678 bd680 bd682 bd684 a.pdf Size:117K _cdil

BD676G
BD676G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package E C B For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUI

5.5. bd676.pdf Size:120K _inchange_semiconductor

BD676G
BD676G

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD676 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD675 APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATIN

5.6. bd676a.pdf Size:74K _inchange_semiconductor

BD676G
BD676G

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD676A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD675A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RAT

5.7. bd676 bd678 bd680.pdf Size:118K _inchange_semiconductor

BD676G
BD676G

Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD675/BD677/BD679 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD

5.8. bd676a 678a 680a 682.pdf Size:118K _inchange_semiconductor

BD676G
BD676G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD675A/677A/679A/681 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD676A/678A/680A/682 Ў¤ Absolute ma

Datasheet: BD438G , BD439G , BD440G , BD441G , BD442G , BD675AG , BD675G , BD676AG , BU808DFI , BD677AG , BD677G , BD678AG , BD678G , BD679AG , BD679G , BD680AG , BD680G .

 


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