BD683A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD683A  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO225

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BD683A datasheet

 ..1. Size:64K  comset
 bd683a.pdf pdf_icon

BD683A

NPN BD683 BD683A SILICON DARLINGTON POWER TRANSISTORS The BD683 and BD683A are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD684 and BD684A. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage 120 V VCB

 9.1. Size:72K  comset
 bd684 bd683.pdf pdf_icon

BD683A

PNP BD684 NPN BD683 SILICON DARLINGTON POWER TRANSISTORS The BD684 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD683 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage 120 V -VCBO Collector-Base Voltage 120 V -VEBO E

 9.2. Size:176K  cdil
 bd675 bd677 bd679 bd681 bd683.pdf pdf_icon

BD683A

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package E C B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITS BD675A 677A 679A VCBO Collector B

 9.3. Size:208K  inchange semiconductor
 bd683.pdf pdf_icon

BD683A

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BD683 DESCRIPTION Collector Emitter Breakdown Voltage V = 120V(Min.) (BR)CEO DC Current Gain h = 750(Min)@ I = 1.5A FE C Complement to Type BD684 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary

MOSTRAR MÁS

Otros transistores... BD679AG, BD679G, BD680AG, BD680G, BD681A, BD681G, BD682A, BD682G, 2SC945, BD684A, BD772-GR, BD772-O, BD772-R, BD772-Y, BD810G, BD882-GR, BD882-O