All Transistors. BD683A Datasheet

 

BD683A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD683A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO225

 BD683A Transistor Equivalent Substitute - Cross-Reference Search

   

BD683A Datasheet (PDF)

 ..1. Size:64K  comset
bd683a.pdf

BD683A
BD683A

NPN BD683 BD683A SILICON DARLINGTON POWER TRANSISTORS The BD683 and BD683A are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD684 and BD684A. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitVCEO Collector-Emitter Voltage 120 V VCB

 9.1. Size:72K  comset
bd684 bd683.pdf

BD683A
BD683A

PNP BD684 NPN BD683 SILICON DARLINGTON POWER TRANSISTORSThe BD684 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD683 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit-VCEO Collector-Emitter Voltage 120 V-VCBO Collector-Base Voltage 120 V-VEBO E

 9.2. Size:176K  cdil
bd675 bd677 bd679 bd681 bd683.pdf

BD683A
BD683A

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675ABD677, BD677ABD679, BD679ABD681, BD683TO126 Plastic PackageECBComplementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITSBD675A 677A 679AVCBOCollector B

 9.3. Size:208K  inchange semiconductor
bd683.pdf

BD683A
BD683A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BD683DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 120V(Min.)(BR)CEODC Current Gain: h = 750(Min)@ I = 1.5AFE CComplement to Type BD684Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementary

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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