2N76 Todos los transistores

 

2N76 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N76
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.125 W
   Tensión colector-base (Vcb): 20 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 60 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.2 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO7
     - Selección de transistores por parámetros

 

2N76 Datasheet (PDF)

 0.1. Size:845K  genesic
 2n7639-ga.pdf pdf_icon

2N76

2N7639-GANormally OFF Silicon Carbide VDS = 600 V Junction Transistor VDS(ON) = 1.3 V ID = 20 A RDS(ON) = 65 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

 0.2. Size:467K  genesic
 2n7637-ga.pdf pdf_icon

2N76

2N7637-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.2 V ID = 7 A RDS(ON) = 170 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

 0.3. Size:504K  genesic
 2n7635-ga.pdf pdf_icon

2N76

2N7635-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Po

 0.4. Size:462K  genesic
 2n7638-ga.pdf pdf_icon

2N76

2N7638-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.4 V ID = 8 A RDS(ON) = 180 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC509B | 2SA9012 | 2SC1635 | BUX42 | BC266B | 2N3868S

 

 
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