2N76 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N76
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 20 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 60 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.2 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO7
Búsqueda de reemplazo de transistor bipolar 2N76
2N76 Datasheet (PDF)
2n7639-ga.pdf
2N7639-GANormally OFF Silicon Carbide VDS = 600 V Junction Transistor VDS(ON) = 1.3 V ID = 20 A RDS(ON) = 65 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G
2n7637-ga.pdf
2N7637-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.2 V ID = 7 A RDS(ON) = 170 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G
2n7635-ga.pdf
2N7635-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Po
2n7638-ga.pdf
2N7638-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.4 V ID = 8 A RDS(ON) = 180 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea
2n7636-ga.pdf
2N7636-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea
2n7640-ga.pdf
2N7640-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 16 A RDS(ON) = 110 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for e
Otros transistores... 2N757 , 2N757A , 2N758 , 2N758A , 2N758B , 2N759 , 2N759A , 2N759B , 2SC2625 , 2N760 , 2N760A , 2N760B , 2N761 , 2N762 , 2N768 , 2N769 , 2N77 .
Liste
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