2N76 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N76
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 60 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO7
2N76 Transistor Equivalent Substitute - Cross-Reference Search
2N76 Datasheet (PDF)
2n7639-ga.pdf
2N7639-GANormally OFF Silicon Carbide VDS = 600 V Junction Transistor VDS(ON) = 1.3 V ID = 20 A RDS(ON) = 65 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G
2n7637-ga.pdf
2N7637-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.2 V ID = 7 A RDS(ON) = 170 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G
2n7635-ga.pdf
2N7635-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Po
2n7638-ga.pdf
2N7638-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.4 V ID = 8 A RDS(ON) = 180 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea
2n7636-ga.pdf
2N7636-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea
2n7640-ga.pdf
2N7640-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 16 A RDS(ON) = 110 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for e
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
