Биполярный транзистор 2N76 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N76
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.01 A
Предельная температура PN-перехода (Tj): 60 °C
Граничная частота коэффициента передачи тока (ft): 0.2 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO7
2N76 Datasheet (PDF)
2n7639-ga.pdf
2N7639-GANormally OFF Silicon Carbide VDS = 600 V Junction Transistor VDS(ON) = 1.3 V ID = 20 A RDS(ON) = 65 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G
2n7637-ga.pdf
2N7637-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.2 V ID = 7 A RDS(ON) = 170 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G
2n7635-ga.pdf
2N7635-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Po
2n7638-ga.pdf
2N7638-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.4 V ID = 8 A RDS(ON) = 180 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea
2n7636-ga.pdf
2N7636-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea
2n7640-ga.pdf
2N7640-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 16 A RDS(ON) = 110 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for e
Другие транзисторы... 2N757 , 2N757A , 2N758 , 2N758A , 2N758B , 2N759 , 2N759A , 2N759B , C3198 , 2N760 , 2N760A , 2N760B , 2N761 , 2N762 , 2N768 , 2N769 , 2N77 .
