BDW42G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDW42G  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 85 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: TO220

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BDW42G datasheet

 ..1. Size:147K  onsemi
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BDW42G

BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed http //onsemi.com switching applications. Features 15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON Collector Emitter

 9.1. Size:176K  motorola
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BDW42G

Order this document MOTOROLA by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary PNP Silicon Power Transistors BDW46 . . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc *Motorola Preferred Device VCEO(sus) = 80 Vdc (

 9.2. Size:481K  semtech
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BDW42G

ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage VCBO 100 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 15 A Base Currentt IB 0.5 A O Total Powe

 9.3. Size:214K  inchange semiconductor
 bdw42.pdf pdf_icon

BDW42G

isc Silicon NPN Darlington Power Transistor BDW42 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 5A FE C Low Collector Saturation Voltage V = 2.0V(Max.)@ I = 5.0A CE(sat) C = 3.0V(Max.)@ I = 10A C Complement to Type BDW47 Minimum Lot-to-Lot variations for robust device performance and reliable opera

MOSTRAR MÁS

Otros transistores... BDS29BM3A, BDS29BN2, BDS29CM3A, BDS29CN2, BDS29CSMD, BDV64BG, BDV65BG, BDW24B, 2N3906, BDW46G, BDW47G, BDW52B, BDX14A, BDX14S, BDX16A, BDX18A, BDX33BG