All Transistors. BDW42G Datasheet

 

BDW42G Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDW42G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO220

 BDW42G Transistor Equivalent Substitute - Cross-Reference Search

   

BDW42G Datasheet (PDF)

 ..1. Size:147K  onsemi
bdw42g.pdf

BDW42G
BDW42G

BDW42G - NPN, BDW46G,BDW47G - PNPDarlington ComplementarySilicon Power TransistorsThis series of plastic, medium-power silicon NPN and PNPDarlington transistors are designed for general purpose and low speedhttp://onsemi.comswitching applications.Features15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc.COMPLEMENTARY SILICON Collector Emitter

 9.1. Size:176K  motorola
bdw42 bdw46 bdw47.pdf

BDW42G
BDW42G

Order this documentMOTOROLAby BDW42/DSEMICONDUCTOR TECHNICAL DATANPNBDW42*Darlington ComplementaryPNPSilicon Power TransistorsBDW46. . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc:*Motorola Preferred DeviceVCEO(sus) = 80 Vdc (

 9.2. Size:481K  semtech
stbdw42.pdf

BDW42G
BDW42G

ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage VCEO 100 VCollector Base Voltage VCBO 100 V Emitter Base Voltage VEBO 5 VCollector Current Continuous IC 15 A Base Currentt IB 0.5 AOTotal Powe

 9.3. Size:214K  inchange semiconductor
bdw42.pdf

BDW42G
BDW42G

isc Silicon NPN Darlington Power Transistor BDW42DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 5AFE CLow Collector Saturation Voltage: V = 2.0V(Max.)@ I = 5.0ACE(sat) C= 3.0V(Max.)@ I = 10ACComplement to Type BDW47Minimum Lot-to-Lot variations for robust deviceperformance and reliable opera

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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