BDW46G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDW46G  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 85 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: TO220

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BDW46G datasheet

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BDW46G

BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed http //onsemi.com switching applications. Features 15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON Collector Emitter

 9.1. Size:176K  motorola
 bdw42 bdw46 bdw47.pdf pdf_icon

BDW46G

Order this document MOTOROLA by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary PNP Silicon Power Transistors BDW46 . . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc *Motorola Preferred Device VCEO(sus) = 80 Vdc (

 9.2. Size:212K  inchange semiconductor
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BDW46G

isc Silicon PNP Darlington Power Transistor BDW46 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = -5A FE C Low Collector Saturation Voltage V = -2.0V(Max.)@ I = -5.0A CE(sat) C = -3.0V(Max.)@ I = -10A C Complement to Type BDW41 Minimum Lot-to-Lot variations for robust device performance and reliable

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