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BDW46G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDW46G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 85 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: TO220
 

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BDW46G Datasheet (PDF)

 ..1. Size:147K  onsemi
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BDW46G

BDW42G - NPN, BDW46G,BDW47G - PNPDarlington ComplementarySilicon Power TransistorsThis series of plastic, medium-power silicon NPN and PNPDarlington transistors are designed for general purpose and low speedhttp://onsemi.comswitching applications.Features15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc.COMPLEMENTARY SILICON Collector Emitter

 9.1. Size:176K  motorola
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BDW46G

Order this documentMOTOROLAby BDW42/DSEMICONDUCTOR TECHNICAL DATANPNBDW42*Darlington ComplementaryPNPSilicon Power TransistorsBDW46. . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc:*Motorola Preferred DeviceVCEO(sus) = 80 Vdc (

 9.2. Size:212K  inchange semiconductor
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BDW46G

isc Silicon PNP Darlington Power Transistor BDW46DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = -5AFE CLow Collector Saturation Voltage: V = -2.0V(Max.)@ I = -5.0ACE(sat) C= -3.0V(Max.)@ I = -10ACComplement to Type BDW41Minimum Lot-to-Lot variations for robust deviceperformance and reliable

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History: KT933B | D39J6 | GE5062 | BF375C | KT207B | AF144 | BUX78A

 

 
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