All Transistors. BDW46G Datasheet

 

BDW46G Datasheet and Replacement


   Type Designator: BDW46G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO220
 

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BDW46G Datasheet (PDF)

 ..1. Size:147K  onsemi
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BDW46G

BDW42G - NPN, BDW46G,BDW47G - PNPDarlington ComplementarySilicon Power TransistorsThis series of plastic, medium-power silicon NPN and PNPDarlington transistors are designed for general purpose and low speedhttp://onsemi.comswitching applications.Features15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc.COMPLEMENTARY SILICON Collector Emitter

 9.1. Size:176K  motorola
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BDW46G

Order this documentMOTOROLAby BDW42/DSEMICONDUCTOR TECHNICAL DATANPNBDW42*Darlington ComplementaryPNPSilicon Power TransistorsBDW46. . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc:*Motorola Preferred DeviceVCEO(sus) = 80 Vdc (

 9.2. Size:212K  inchange semiconductor
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BDW46G

isc Silicon PNP Darlington Power Transistor BDW46DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = -5AFE CLow Collector Saturation Voltage: V = -2.0V(Max.)@ I = -5.0ACE(sat) C= -3.0V(Max.)@ I = -10ACComplement to Type BDW41Minimum Lot-to-Lot variations for robust deviceperformance and reliable

Datasheet: BDS29BN2 , BDS29CM3A , BDS29CN2 , BDS29CSMD , BDV64BG , BDV65BG , BDW24B , BDW42G , BC557 , BDW47G , BDW52B , BDX14A , BDX14S , BDX16A , BDX18A , BDX33BG , BDX33CG .

History: BSXP65 | BFS480

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