BDY76E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDY76E  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 20 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO204

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BDY76E datasheet

 ..1. Size:11K  semelab
 bdy76e.pdf pdf_icon

BDY76E

BDY76E Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.1. Size:208K  inchange semiconductor
 bdy76.pdf pdf_icon

BDY76E

isc Silicon NPN Power Transistor BDY76 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- h = 40 120@I = 10A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applicatio

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