BDY76E Datasheet. Specs and Replacement
Type Designator: BDY76E 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 20 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO204
📄📄 Copy
BDY76E Substitution
- BJT ⓘ Cross-Reference Search
BDY76E datasheet
BDY76E Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
isc Silicon NPN Power Transistor BDY76 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- h = 40 120@I = 10A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applicatio... See More ⇒
Detailed specifications: BDX67CECC, BDY27AS, BDY27CX, BDY55X, BDY58A, BDY58S, BDY60-02, BDY71X, TIP31, BDY90S, BFU520, BFU520A, BFU520W, BFU520X, BFU520XR, BFU520Y, BFU530
Keywords - BDY76E pdf specs
BDY76E cross reference
BDY76E equivalent finder
BDY76E pdf lookup
BDY76E substitution
BDY76E replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
p75nf75 mosfet | ao4407a | mpsa06 datasheet | bc548 pinout | bdw94c | bd140 transistor | 2n2222a datasheet | bd136

