All Transistors. BDY76E Datasheet

 

BDY76E Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDY76E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 20 A
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO204

 BDY76E Transistor Equivalent Substitute - Cross-Reference Search

   

BDY76E Datasheet (PDF)

 ..1. Size:11K  semelab
bdy76e.pdf

BDY76E

BDY76EDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.1. Size:208K  inchange semiconductor
bdy76.pdf

BDY76E
BDY76E

isc Silicon NPN Power Transistor BDY76DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-: h = 40~120@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applicatio

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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