BFU550A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFU550A
Código: HW*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.45 W
Tensión colector-base (Vcb): 24 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.015 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 11000 MHz
Capacitancia de salida (Cc): 0.74 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BFU550A
BFU550A Datasheet (PDF)
bfu550a.pdf
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bfu550x.pdf
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BFU550NPN wideband silicon RF transistorRev. 2.1 17 April 2019 Product data sheet1 Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550 is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz.1.2 Features and ben
bfu550x.pdf
BFU550XNPN wideband silicon RF transistorRev. 2 12 April 2019 Product data sheet1 Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550X is part of the BFU5 family of transistors, suitable for small signal tomedium power applications up to 2 GHz.1.2 Features and ben
bfu550w.pdf
BFU550WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU550W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
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