BFU550A
Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU550A
SMD Transistor Code: HW*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45
W
Maximum Collector-Base Voltage |Vcb|: 24
V
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 2
V
Maximum Collector Current |Ic max|: 0.015
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 11000
MHz
Collector Capacitance (Cc): 0.74
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
SOT23
BFU550A
Transistor Equivalent Substitute - Cross-Reference Search
BFU550A
Datasheet (PDF)
..1. Size:294K nxp
bfu550a.pdf 
BFU550ANPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package.The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.1. Size:331K philips
bfu550xr.pdf
BFU550XRNPN wideband silicon RF transistorRev. 1 14 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
8.2. Size:324K philips
bfu550.pdf
BFU550NPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.3. Size:325K philips
bfu550x.pdf
BFU550XNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
8.4. Size:283K nxp
bfu550.pdf
BFU550NPN wideband silicon RF transistorRev. 2.1 17 April 2019 Product data sheet1 Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550 is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz.1.2 Features and ben
8.5. Size:276K nxp
bfu550x.pdf
BFU550XNPN wideband silicon RF transistorRev. 2 12 April 2019 Product data sheet1 Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550X is part of the BFU5 family of transistors, suitable for small signal tomedium power applications up to 2 GHz.1.2 Features and ben
8.6. Size:296K nxp
bfu550w.pdf
BFU550WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU550W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
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