BFU550X Todos los transistores

 

BFU550X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFU550X
   Código: *TG
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.45 W
   Tensión colector-base (Vcb): 24 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.015 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 11000 MHz
   Capacitancia de salida (Cc): 0.72 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT143B

 Búsqueda de reemplazo de transistor bipolar BFU550X

 

BFU550X Datasheet (PDF)

 ..1. Size:325K  philips
bfu550x.pdf

BFU550X
BFU550X

BFU550XNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be

 ..2. Size:276K  nxp
bfu550x.pdf

BFU550X
BFU550X

BFU550XNPN wideband silicon RF transistorRev. 2 12 April 2019 Product data sheet1 Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550X is part of the BFU5 family of transistors, suitable for small signal tomedium power applications up to 2 GHz.1.2 Features and ben

 0.1. Size:331K  philips
bfu550xr.pdf

BFU550X
BFU550X

BFU550XRNPN wideband silicon RF transistorRev. 1 14 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and

 8.1. Size:324K  philips
bfu550.pdf

BFU550X
BFU550X

BFU550NPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene

 8.2. Size:294K  nxp
bfu550a.pdf

BFU550X
BFU550X

BFU550ANPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package.The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits

 8.3. Size:283K  nxp
bfu550.pdf

BFU550X
BFU550X

BFU550NPN wideband silicon RF transistorRev. 2.1 17 April 2019 Product data sheet1 Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550 is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz.1.2 Features and ben

 8.4. Size:296K  nxp
bfu550w.pdf

BFU550X
BFU550X

BFU550WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU550W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits

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History: 2SD1126K | 2SD1005-W

 

 
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