2SA1036-P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MCC 2SA1036-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1036-Q CA 91311 Phone (818) 701-4933 2SA1036-R Fax (818) 701-4939 Features PNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat). Ideal for low-voltage operation. Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

MCC 2SA1036-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1036-Q CA 91311 Phone (818) 701-4933 2SA1036-R Fax (818) 701-4939 Features PNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat). Ideal for low-voltage operation. Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

MCC 2SA1036-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1036-Q CA 91311 Phone (818) 701-4933 2SA1036-R Fax (818) 701-4939 Features PNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat). Ideal for low-voltage operation. Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

2SA1036K Datasheet Medium Power Transistor (-32V,-500mA) lOutline l Parameter Value SMT3 VCEO -32V IC -500mA SOT-346 SC-59 lFeatures l 1)Large IC. lInner circuit l ICMAX=-500mA 2)Low VCE(sat). Ideal for low-voltage operating. 3)Complements the 2SC2411K. lApplication l GENERAL PURPOSE SMALL SIG

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maxim

2SA1036K FRA Datasheet Medium Power Transistor (-32V,-500mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO -32V IC -500mA SMT3 lFeatures lInner circuit l l 1) High IC(=500mA) on small package. 2)Low VCE(sat). Ideal for low-voltage operating. 3)Complements the 2SC2411K FRA. lApplication l GENERAL PURPOSE SM

2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2 K E Range 82 180 120 270 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1036 TRANSISTOR (PNP) 3 FEATURES 1 Large IC. ICMax.= -500 mA 2 Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING HP, HQ, HR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO

2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector

2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VC

2SA1036 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO

2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature

FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

SMD Type Transistors PNP Transistors 2SA1036 (2SA1036K) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Large IC. ICMax. = -500mA Low VCE(sat). Ideal for low-voltage operation. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter

CHENMKO ENTERPRISE CO.,LTD 2SA1036KGP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) (3)

K K K K K