Биполярный транзистор 2SA1036-P - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1036-P
Маркировка: HP
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 7 pf
Статический коэффициент передачи тока (hfe): 82
Корпус транзистора: SOT23
Аналоги (замена) для 2SA1036-P
2SA1036-P Datasheet (PDF)
2sa1036-p.pdf
MCC2SA1036-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1036-QCA 91311Phone: (818) 701-49332SA1036-RFax: (818) 701-4939FeaturesPNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat).Ideal for low-voltage operation.Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1
2sa1036-r.pdf
MCC2SA1036-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1036-QCA 91311Phone: (818) 701-49332SA1036-RFax: (818) 701-4939FeaturesPNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat).Ideal for low-voltage operation.Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1
2sa1036-q.pdf
MCC2SA1036-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1036-QCA 91311Phone: (818) 701-49332SA1036-RFax: (818) 701-4939FeaturesPNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat).Ideal for low-voltage operation.Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1
2sa1036k.pdf
2SA1036KDatasheetMedium Power Transistor (-32V,-500mA)lOutlinelParameter Value SMT3VCEO-32VIC-500mASOT-346SC-59 lFeaturesl1)Large IC.lInner circuitl ICMAX=-500mA2)Low VCE(sat). Ideal for low-voltage operating.3)Complements the 2SC2411K.lApplicationlGENERAL PURPOSE SMALL SIG
2sa1036k 2sa1577 2sa854s 2sa854 2sa1036k 2sa1577.pdf
TransistorsMedium Power Transistor(*32V, *0.5A)2SA1036K / 2SA1577 / 2SA854SFFeatures FExternal dimensions (Units: mm)1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltageoperation.3) Complements the 2SC2411K /2SC1741S / 2SC4097.FStructureEpitaxial planar typePNP silicon transistor(96-86-B11)204Transistors 2SA1036K / 2SA1577 / 2SA854SFAbsolute maxim
2sa1036kfra.pdf
2SA1036K FRADatasheetMedium Power Transistor (-32V,-500mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO-32VIC-500mASMT3lFeatures lInner circuitl l1) High IC(=500mA) on small package.2)Low VCE(sat). Ideal for low-voltage operating.3)Complements the 2SC2411K FRA.lApplicationlGENERAL PURPOSE SM
2sa1036.pdf
2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2K ERange 82~180 120~270 1
2sa1036.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1036 TRANSISTOR (PNP) 3FEATURES 1 Large IC. ICMax.= -500 mA 2 Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO
2sa1036.pdf
2SA1 036TRANSISTOR(PNP)SOT-23 FEATURES Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector
2sa1036k.pdf
2SA1036K SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2.922. EMITTER 0.351.173. COLLECTOR Features2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.151.90MARKING : HP, HQ, HR Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VC
2sa1036.pdf
2SA1036 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO
2sa1036k.pdf
2SA1036KPNP General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO-32 VVCBOCollector-Base Voltage -40 VVEBOEmitter-Base Voltage -5.0 VICCollector Current - Continuous -500* mATotal Device DissipationPD0.2 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature
2sa1036kxlt1.pdf
FM120-M WILLAS2SA1036KxLT1THRU(*32V, *0.5A)Medium Power TransistorFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to
l2sa1036kplt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
l2sa1036kqlt1g l2sa1036krlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
l2sa1036krlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
l2sa1036kqlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
2sa1036.pdf
SMD Type TransistorsPNP Transistors2SA1036 (2SA1036K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesLarge IC. ICMax. = -500mALow VCE(sat). Ideal for low-voltage operation.1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -40 VCollector-emitter
2sa1036kgp.pdf
CHENMKO ENTERPRISE CO.,LTD2SA1036KGPSURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage VCE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)(3)
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050