2SA1039A Todos los transistores

RoHS 2SA1309A 2SA1309A TRANSISTOR (PNP) TO-92S FEATURES Power dissipation 1. EMITTER PCM 0.3 W (Tamb=25 ) 2. COLLECTOR Collector current ICM -0.1 A 3. BASE Collector-base voltage V(BR)CBO -60 V Operating and storage junction temperature range 123 TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified

2SA1036K Datasheet Medium Power Transistor (-32V,-500mA) lOutline l Parameter Value SMT3 VCEO -32V IC -500mA SOT-346 SC-59 lFeatures l 1)Large IC. lInner circuit l ICMAX=-500mA 2)Low VCE(sat). Ideal for low-voltage operating. 3)Complements the 2SC2411K. lApplication l GENERAL PURPOSE SMALL SIG

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 0.1Min. Each lead has same dimensions ROHM UMT3 (1) Emitter EIAJ SC-70 (2) Base JEDEC SOT-

General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 1.25 Structure 1.6 2.1 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same

Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_

General Purpose Transistor ( 50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet General Purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1) General Purpose. 2) Complementary 2SC5658/2SC4617EB 2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maxim

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576U3 / 2SA1037AK Datasheet General purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/ 2SA1774 2SA1576UB 2SC4617/2SC

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -120 V Collec

2SA1036K FRA Datasheet Medium Power Transistor (-32V,-500mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO -32V IC -500mA SMT3 lFeatures lInner circuit l l 1) High IC(=500mA) on small package. 2)Low VCE(sat). Ideal for low-voltage operating. 3)Complements the 2SC2411K FRA. lApplication l GENERAL PURPOSE SM

MCC 2SA1036-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1036-Q CA 91311 Phone (818) 701-4933 2SA1036-R Fax (818) 701-4939 Features PNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat). Ideal for low-voltage operation. Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

MCC 2SA1036-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1036-Q CA 91311 Phone (818) 701-4933 2SA1036-R Fax (818) 701-4939 Features PNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat). Ideal for low-voltage operation. Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

MCC 2SA1037-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1037-R CA 91311 Phone (818) 701-4933 2SA1037-S Fax (818) 701-4939 Features Small Package PNP Silicon Mounting any position Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant

MCC 2SA1037-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1037-R CA 91311 Phone (818) 701-4933 2SA1037-S Fax (818) 701-4939 Features Small Package PNP Silicon Mounting any position Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant

MCC 2SA1037-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1037-R CA 91311 Phone (818) 701-4933 2SA1037-S Fax (818) 701-4939 Features Small Package PNP Silicon Mounting any position Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant

MCC 2SA1036-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1036-Q CA 91311 Phone (818) 701-4933 2SA1036-R Fax (818) 701-4939 Features PNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat). Ideal for low-voltage operation. Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC2405 and 2SC2406 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape

2SA1031, 2SA1032 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V

2SA1029, 2SA1030 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base

2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2 K E Range 82 180 120 270 1

2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. A Complements of the 2SC2412 L 3 3 MECHANICAL DATA Top View C B Case SOT-23, Molded Plastic 1 1 2 Weight 0.008 grams(approx.) 2 K E D H J CLASSIFICATION

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1036 TRANSISTOR (PNP) 3 FEATURES 1 Large IC. ICMax.= -500 mA 2 Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING HP, HQ, HR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1037 TRANSISTOR (PNP) 3 FEATURES 1 Excellent hFE linearity. Complments the 2SC2412 1. BASE 2 2. EMITTER 3. COLLECTOR MARKING FQ, FR, FS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO

2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector

2SA1 037 SOT-23 TRANSISTOR(PNP) FEATURES Excellent hFE linearity. Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING FQ, FR, FS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 m

2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VC

2SA1037AK SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Excellent hFE linearity. Complments the 2SC2412K. 0.15 1.90 MARKING FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter

2SA1036 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO

2SA1037 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6

2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature

2SA1037AK PNP 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -50 -60 -6.0 -150 200 1.6 625 TJ ,Tstg -1.0 -50 -50 -60 -6.0 -50 u -0.1 IE= ) O Vdc, 0 E=-50 u -0.1 -60 -0.1 u -6.0 WEITRON 1/5 24-Jul-07 http //www.weitron.com.tw 2SA1037AK ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERI

FM120-M WILLAS 2SA1037AKxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. PNP Silicon SOD-123H Low profile surface mounted application in order

FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

2SA1037AK Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , 2SC2412K Excellent hFE linearity, Complementary pair with 2SC2412K. / Applications General amplifier applications. / Eq

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features We declare that the material of product compliance with RoHS requirements. L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1037AKQLT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pac

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

SMD Type Transistors PNP Transistors 2SA1036 (2SA1036K) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Large IC. ICMax. = -500mA Low VCE(sat). Ideal for low-voltage operation. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter

SMD Type or SMD Type TransistICs PNP Transistors 2SA1035 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Low noise voltage NV. High foward current transfer ratio hFE. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SC2406. +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base volta

SMD Type Transistors PNP Transistors 2SA1034 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-35V 1 2 Complementary to 2SC2405 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

SMD Type Transistors PNP Transistors 2SA1037 (2SA1037AK) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=-50V 1 2 Complments the 2SC2412 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) * Low cob. Cob=4.0pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. (

CHENMKO ENTERPRISE CO.,LTD 2SA1037WGP SURFACE MOUNT Dual Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) * Low cob. Cob=4.0pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current

CHENMKO ENTERPRISE CO.,LTD 2SA1036KGP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) (3)

K K K K K

RoHS RoHS COMPLIANT COMPLIANT 2SA1037 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-23 P Terminals Tin plated leads, solderable per

Plastic-Encapsulate Transistors FEATURES Excellent hFE linearity. 2SA1037(PNP) Complments the 2SC2412 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -150 mA 1. BASE Collector Power Dissipation PC 200 mW 2. EMITTER SOT