RoHS 2SA1309A 2SA1309A TRANSISTOR (PNP) TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25) 2. COLLECTOR Collector current ICM : -0.1 A 3. BASE Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified

2SA1036KDatasheetMedium Power Transistor (-32V,-500mA)lOutlinelParameter Value SMT3VCEO-32VIC-500mASOT-346SC-59 lFeaturesl1)Large IC.lInner circuitl ICMAX=-500mA2)Low VCE(sat). Ideal for low-voltage operating.3)Complements the 2SC2411K.lApplicationlGENERAL PURPOSE SMALL SIG

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA15792) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.252.10.1Min.Each lead has same dimensionsROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) BaseJEDEC : SOT-

General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 1.25Structure 1.62.12.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dimensionsEach lead has same

TransistorsGeneral Purpose Transistor(*50V, *0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA933ASFFeatures FExternal dimensions (Units: mm)1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC1740S.FStructureEpitaxial planar typePNP silicon transistor(96-89-A32)198Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933ASFAbsolute maximum ratings (Ta = 25_

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576A / 2SA1037AKDatasheetGeneral Purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1) General Purpose. 2) Complementary:2SC5658/2SC4617EB2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

TransistorsMedium Power Transistor(*32V, *0.5A)2SA1036K / 2SA1577 / 2SA854SFFeatures FExternal dimensions (Units: mm)1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltageoperation.3) Complements the 2SC2411K /2SC1741S / 2SC4097.FStructureEpitaxial planar typePNP silicon transistor(96-86-B11)204Transistors 2SA1036K / 2SA1577 / 2SA854SFAbsolute maxim

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576U3 / 2SA1037AKDatasheetGeneral purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/2SA1774 2SA1576UB 2SC4617/2SC

2SA1037AK FRADatasheetGeneral Purpose Transistor (-50V, -150mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO-50VIC-150mASMT3lFeatures lInner circuitl l1)Excellent hFE linearity.2)Complements the 2SC2412K FRA.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIER

2SA1579 / 2SA1514K / 2SA1038STransistorsHigh-voltage Amplifier Transistor(-120V, -50mA)2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO = -120V)2SA15792) Complements the 2SC4102 / 2SC3906K / 2SC2389S.1.252.1 Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -120 VCollec

2SA1036K FRADatasheetMedium Power Transistor (-32V,-500mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO-32VIC-500mASMT3lFeatures lInner circuitl l1) High IC(=500mA) on small package.2)Low VCE(sat). Ideal for low-voltage operating.3)Complements the 2SC2411K FRA.lApplicationlGENERAL PURPOSE SM

MCC2SA1036-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1036-QCA 91311Phone: (818) 701-49332SA1036-RFax: (818) 701-4939FeaturesPNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat).Ideal for low-voltage operation.Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

MCC2SA1036-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1036-QCA 91311Phone: (818) 701-49332SA1036-RFax: (818) 701-4939FeaturesPNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat).Ideal for low-voltage operation.Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

MCC2SA1037-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1037-RCA 91311Phone: (818) 701-49332SA1037-SFax: (818) 701-4939Features Small PackagePNP Silicon Mounting:any positionEpitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant

MCC2SA1037-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1037-RCA 91311Phone: (818) 701-49332SA1037-SFax: (818) 701-4939Features Small PackagePNP Silicon Mounting:any positionEpitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant

MCC2SA1037-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1037-RCA 91311Phone: (818) 701-49332SA1037-SFax: (818) 701-4939Features Small PackagePNP Silicon Mounting:any positionEpitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant

MCC2SA1036-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1036-QCA 91311Phone: (818) 701-49332SA1036-RFax: (818) 701-4939FeaturesPNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat).Ideal for low-voltage operation.Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

Transistor2SA1034, 2SA1035Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC2405 and 2SC2406Features+0.22.8 0.3 Low noise voltage NV.+0.250.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape

2SA1031, 2SA1032Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC458 (LG) and 2SC2310OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1031, 2SA1032Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1031 2SA1032 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 V

2SA1029, 2SA1030Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC458 and 2SC2308OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1029, 2SA1030Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1029 2SA1030 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base

2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2K ERange 82~180 120~270 1

2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. A Complements of the 2SC2412 L33MECHANICAL DATA Top ViewC B Case: SOT-23, Molded Plastic 11 2 Weight: 0.008 grams(approx.) 2K EDH JCLASSIFICATION

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1036 TRANSISTOR (PNP) 3FEATURES 1 Large IC. ICMax.= -500 mA 2 Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1037 TRANSISTOR (PNP) 3FEATURES 1 Excellent hFE linearity. Complments the 2SC2412 1. BASE 22. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 V VCEO

2SA1 036TRANSISTOR(PNP)SOT-23 FEATURES Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector

2SA1 037SOT-23 TRANSISTOR(PNP)FEATURES Excellent hFE linearity. Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 m

2SA1036K SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2.922. EMITTER 0.351.173. COLLECTOR Features2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.151.90MARKING : HP, HQ, HR Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VC

2SA1037AK SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2.922. EMITTER 0.353. COLLECTOR 1.17Features2.80 1.60 Excellent hFE linearity. Complments the 2SC2412K. 0.151.90MARKING : FQ, FR, FS Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter

2SA1036 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO

2SA1037 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6

2SA1036KPNP General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO-32 VVCBOCollector-Base Voltage -40 VVEBOEmitter-Base Voltage -5.0 VICCollector Current - Continuous -500* mATotal Device DissipationPD0.2 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature

2SA1037AKPNP3P b Lead(Pb)-Free12SOT-23ValueVCEO -50-60-6.0-1502001.6625TJ ,Tstg-1.0-50-50 -60-6.0-50u-0.1IE= ) OVdc, 0E=-50u-0.1-60-0.1 u-6.0WEITRON1/5 24-Jul-07http://www.weitron.com.tw2SA1037AKELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERI

FM120-M WILLAS2SA1037AKxLT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.PNP SiliconSOD-123H Low profile surface mounted application in order

FM120-M WILLAS2SA1036KxLT1THRU(*32V, *0.5A)Medium Power TransistorFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

2SA1037AK Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , 2SC2412K Excellent hFE linearity, Complementary pair with 2SC2412K. / Applications General amplifier applications. / Eq

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeatures We declare that the material of product compliance with RoHS requirements.L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1037AKQLT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pac

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

SMD Type TransistorsPNP Transistors2SA1036 (2SA1036K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesLarge IC. ICMax. = -500mALow VCE(sat). Ideal for low-voltage operation.1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -40 VCollector-emitter

SMD Type orSMD Type TransistICsPNP Transistors2SA1035SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Low noise voltage NV. High foward current transfer ratio hFE. 1 2+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC2406.+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base volta

SMD Type TransistorsPNP Transistors2SA1034SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-35V1 2 Complementary to 2SC2405+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

SMD Type TransistorsPNP Transistors2SA1037 (2SA1037AK)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=-50V1 2 Complments the 2SC2412+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

CHENMKO ENTERPRISE CO.,LTD2SA1037KGPSURFACE MOUNTPNP Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capability.(

CHENMKO ENTERPRISE CO.,LTD2SA1037WGPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SC-70/SOT-323)SC-70/SOT-323* Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current

CHENMKO ENTERPRISE CO.,LTD2SA1036KGPSURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage VCE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)(3)

KKKKK

RoHS RoHSCOMPLIANT COMPLIANT 2SA1037 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-23 P Terminals: Tin plated leads, solderable per

Plastic-Encapsulate TransistorsFEATURESExcellent hFE linearity.2SA1037(PNP)Complments the 2SC2412MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage -60 VVCEOCollector-Emitter Voltage -50 VVEBOEmitter-Base Voltage -6 VICCollector Current -Continuous -150 mA1. BASECollector Power Dissipation PC 200 mW2. EMITTER SOT