2SA1162-GR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70 to 400 Low noise: NF = 1dB (typ.), 10dB (max) Complementar

MCC2SA1162-OTM Micro Commercial Components20736 Marilla Street Chatsworth2SA1162-YMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1162-GRFax: (818) 701-4939Features Capable of 0.15Watts of Power Dissipation.PNP Silicon Collector-current: 0.15A Collector-base Voltage: -50V Plastic-Encapsulate Operating and storage junction temperature rang

MCC2SA1162-OTM Micro Commercial Components20736 Marilla Street Chatsworth2SA1162-YMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1162-GRFax: (818) 701-4939Features Capable of 0.15Watts of Power Dissipation.PNP Silicon Collector-current: 0.15A Collector-base Voltage: -50V Plastic-Encapsulate Operating and storage junction temperature rang

MCC2SA1162-OTM Micro Commercial Components20736 Marilla Street Chatsworth2SA1162-YMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1162-GRFax: (818) 701-4939Features Capable of 0.15Watts of Power Dissipation.PNP Silicon Collector-current: 0.15A Collector-base Voltage: -50V Plastic-Encapsulate Operating and storage junction temperature rang

SMD Type TransistorsPNP Transistors2SA1162-HFSOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features High voltage and high current1 2 High hFE: hFE = 70~400+0.02+0.10.15 -0.020.95 -0.1 Low noise: NF = 1dB (typ.), 10dB (max) +0.11.9-0.2 Complementary to 2SC2712-HF Pb-Free Package May be Available. The G-Suffix Denotes a1. Base Pb-Fre