2SB1616 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1616  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 22 pF

Ganancia de corriente contínua (hFE): 1000

Encapsulados: TO220F

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2SB1616 datasheet

 ..1. Size:37K  rohm
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2SB1616

2SB1616 Transistors Transistors 2SD2478 (SPEC-B426) (94L-1129-D426) 301

 8.1. Size:213K  toshiba
 2sb1617.pdf pdf_icon

2SB1616

 8.2. Size:35K  panasonic
 2sb1612.pdf pdf_icon

2SB1616

Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5

 8.3. Size:39K  panasonic
 2sb1612 e.pdf pdf_icon

2SB1616

Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5

MOSTRAR MÁS

Otros transistores... 2SA1386B-A, 2SA1400-Z, 2SA1412-Z, 2SA1416S-TD-E, 2SA1416T-TD-E, 2SA1417S-TD-E, 2SA1417T-TD-E, 2SA1418S-TD-E, 2N2222, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SA1464-P, 2SA1464-Q, 2SA1464-R, 2SA1514KFRA, 2SA1515S