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2SB1616 Specs and Replacement


   Type Designator: 2SB1616
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220F

 2SB1616 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1616 detailed specifications

 ..1. Size:37K  rohm
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2SB1616

2SB1616 Transistors Transistors 2SD2478 (SPEC-B426) (94L-1129-D426) 301 ... See More ⇒

 8.1. Size:213K  toshiba
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2SB1616

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 8.2. Size:35K  panasonic
2sb1612.pdf pdf_icon

2SB1616

Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5... See More ⇒

 8.3. Size:39K  panasonic
2sb1612 e.pdf pdf_icon

2SB1616

Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5... See More ⇒

Detailed specifications: 2SA1386B-A , 2SA1400-Z , 2SA1412-Z , 2SA1416S-TD-E , 2SA1416T-TD-E , 2SA1417S-TD-E , 2SA1417T-TD-E , 2SA1418S-TD-E , 2N2222 , 2SA1419S-TD-H , 2SA1419T-TD-E , 2SA1419T-TD-H , 2SA1464-P , 2SA1464-Q , 2SA1464-R , 2SA1514KFRA , 2SA1515S .

History: UMH6N

Keywords - 2SB1616 transistor specs

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