2SB1616 Specs and Replacement
Type Designator: 2SB1616
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 22 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220F
2SB1616 Transistor Equivalent Substitute - Cross-Reference Search
2SB1616 detailed specifications
2sb1616.pdf
2SB1616 Transistors Transistors 2SD2478 (SPEC-B426) (94L-1129-D426) 301 ... See More ⇒
2sb1612.pdf
Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5... See More ⇒
2sb1612 e.pdf
Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5... See More ⇒
Detailed specifications: 2SA1386B-A , 2SA1400-Z , 2SA1412-Z , 2SA1416S-TD-E , 2SA1416T-TD-E , 2SA1417S-TD-E , 2SA1417T-TD-E , 2SA1418S-TD-E , 2N2222 , 2SA1419S-TD-H , 2SA1419T-TD-E , 2SA1419T-TD-H , 2SA1464-P , 2SA1464-Q , 2SA1464-R , 2SA1514KFRA , 2SA1515S .
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