2SB1616 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1616
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 22 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220F
2SB1616 Transistor Equivalent Substitute - Cross-Reference Search
2SB1616 Datasheet (PDF)
2sb1612.pdf
Transistor2SB1612Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD24741.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5
2sb1612 e.pdf
Transistor2SB1612Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD24741.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5
2sb1612.pdf
SMD Type TransistorsPNP Transistors2SB1612SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-10V Complementary to 2SD24740.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emitter Voltage VCEO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
