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2SA1419T-TD-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1419T-TD-E
   Código: AE
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 22 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT89

 Búsqueda de reemplazo de transistor bipolar 2SA1419T-TD-E

 

2SA1419T-TD-E Datasheet (PDF)

 2.1. Size:220K  onsemi
2sa1419s 2sa1419s-td-h 2sa1419t 2sa1419t-td-h 2sc3649s 2sc3649s-td-h 2sc3649t 2sc3649t-td-h.pdf

2SA1419T-TD-E 2SA1419T-TD-E

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

 7.1. Size:127K  sanyo
2sa1419.pdf

2SA1419T-TD-E 2SA1419T-TD-E

 7.2. Size:305K  sanyo
2sa1419 2sc3649.pdf

2SA1419T-TD-E 2SA1419T-TD-E

Ordering number : EN2007B2SA1419 / 2SC3649SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1419 / 2SC3649High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs.Specifications ( ) :

 7.3. Size:356K  onsemi
2sa1419 2sc3649.pdf

2SA1419T-TD-E 2SA1419T-TD-E

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

 7.4. Size:1548K  kexin
2sa1419.pdf

2SA1419T-TD-E 2SA1419T-TD-E

SMD Type TransistorsPNP Transistors 2SA14191.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity Complementary to 2SC36490.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter -

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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