2SC5964-TD-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5964-TD-H
Código: HA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 3.5 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 380 MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar 2SC5964-TD-H
2SC5964-TD-H Datasheet (PDF)
2sa2125 2sa2125-td-h 2sc5964 2sc5964-td-h.pdf
Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free
2sa2125 2sc5964.pdf
Ordering number ENN7988 2SA2125 / 2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2125 / 2SC5964 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications
2sa2125 2sc5964.pdf
Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free
2sc5966.pdf
Ordering number ENN7653 2SC5966 NPN Triple Diffused Planar Silicon Transistor 2SC5966 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High-speed. unit mm High breakdown voltage (VCBO=1700V). 2174A High reliability (Adoption of HVP process). [2SC5966] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1
Otros transistores... 2SC5706-TL-E , 2SC5706-TL-H , 2SC5707-E , 2SC5707-TL-E , 2SC5814 , 2SC5815 , 2SC5876FRA , 2SC5964-TD-E , A1013 , 2SC5974 , 2SC5974A , 2SC5974B , 2SC5994-TD-E , 2SC6017-E , 2SC6017-TL-E , 2SC6046 , 2SC6094-TD-E .
History: 2SD200 | 2SB955K | 2SC2947 | 2SD1824 | RN1901FS | BD372A | RN1909FE
History: 2SD200 | 2SB955K | 2SC2947 | 2SD1824 | RN1901FS | BD372A | RN1909FE
Liste
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