2SC5964-TD-H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5964-TD-H  📄📄 

Código: HA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 3.5 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 380 MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT89

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2SC5964-TD-H datasheet

 ..1. Size:188K  onsemi
 2sa2125 2sa2125-td-h 2sc5964 2sc5964-td-h.pdf pdf_icon

2SC5964-TD-H

Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

 7.1. Size:59K  sanyo
 2sa2125 2sc5964.pdf pdf_icon

2SC5964-TD-H

Ordering number ENN7988 2SA2125 / 2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2125 / 2SC5964 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications

 7.2. Size:319K  onsemi
 2sa2125 2sc5964.pdf pdf_icon

2SC5964-TD-H

Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

 8.1. Size:30K  sanyo
 2sc5966.pdf pdf_icon

2SC5964-TD-H

Ordering number ENN7653 2SC5966 NPN Triple Diffused Planar Silicon Transistor 2SC5966 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High-speed. unit mm High breakdown voltage (VCBO=1700V). 2174A High reliability (Adoption of HVP process). [2SC5966] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1

MOSTRAR MÁS

Otros transistores... 2SC5706-TL-E, 2SC5706-TL-H, 2SC5707-E, 2SC5707-TL-E, 2SC5814, 2SC5815, 2SC5876FRA, 2SC5964-TD-E, A1013, 2SC5974, 2SC5974A, 2SC5974B, 2SC5994-TD-E, 2SC6017-E, 2SC6017-TL-E, 2SC6046, 2SC6094-TD-E