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2SC6120 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC6120
   Código: BW
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 75 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT323
 

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2SC6120 Datasheet (PDF)

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 2sc6120.pdf pdf_icon

2SC6120

2SC6120FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION UnitmmOUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCEsat. 0.425 1.25 0.425FEATURE High collector current ICMAX=600mA Low collector to emitter saturation voltage VCE

 8.1. Size:201K  toshiba
 2sc6124.pdf pdf_icon

2SC6120

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO

 8.2. Size:219K  toshiba
 2sc6126.pdf pdf_icon

2SC6120

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mmDC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic

 8.3. Size:150K  toshiba
 2sc6125.pdf pdf_icon

2SC6120

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector

MOSTRAR MÁS

Otros transistores... 2SC6097-TL-E , 2SC6098-E , 2SC6098-TL-E , 2SC6099-E , 2SC6099-TL-E , 2SC6105 , 2SC6114G5GP , 2SC6114T1GP , D667 , 2SC6123 , 2SC6123-Z , 2SC6145 , 2SC6145A , 2SC945-GR , 2SC945LT1 , 2SC945-Y , 2SD1991A .

History: TPA2030NND03 | KTA2014 | MMBR911

 

 
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