2SC6120 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC6120
Código: BW
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT323
Búsqueda de reemplazo de 2SC6120
- Selecciónⓘ de transistores por parámetros
2SC6120 datasheet
2sc6120.pdf
2SC6120 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Unit mm OUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCE sat . 0.425 1.25 0.425 FEATURE High collector current IC MAX =600mA Low collector to emitter saturation voltage VCE
2sc6124.pdf
2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO
2sc6126.pdf
2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit mm DC-DC Converter Applications LCD Backlighting Applications High DC current gain hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation VCE(sat) = 0.18 V (max) High-speed switching tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic
2sc6125.pdf
2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit mm Power Amplifier Applications High DC current gain hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector
Otros transistores... 2SC6097-TL-E , 2SC6098-E , 2SC6098-TL-E , 2SC6099-E , 2SC6099-TL-E , 2SC6105 , 2SC6114G5GP , 2SC6114T1GP , BC547B , 2SC6123 , 2SC6123-Z , 2SC6145 , 2SC6145A , 2SC945-GR , 2SC945LT1 , 2SC945-Y , 2SD1991A .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor | 2sb649a | 2sd188 | k b778 transistor | 2n5133 datasheet