2SC6120
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC6120
Código: BW
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 75
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT323
Búsqueda de reemplazo de transistor bipolar 2SC6120
2SC6120
Datasheet (PDF)
..1. Size:138K isahaya
2sc6120.pdf 
2SC6120FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION UnitmmOUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCEsat. 0.425 1.25 0.425FEATURE High collector current ICMAX=600mA Low collector to emitter saturation voltage VCE
8.1. Size:201K toshiba
2sc6124.pdf
2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO
8.2. Size:219K toshiba
2sc6126.pdf
2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mmDC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic
8.3. Size:150K toshiba
2sc6125.pdf
2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector
8.4. Size:132K toshiba
2sc6127.pdf
2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit: mmHigh Voltage Amplifier Applications High voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 800 VCollector-emitter voltage VCEO 800 VEmitter-base voltage VEBO 5 VCollector current IC 5
8.5. Size:306K renesas
2sc6123.pdf
2SC6123 R07DS0329JJ0100Rev.1.00 2011.04.15 2SC6123 VCE(sat) hFE NPN OAFA DC/DC hFE
8.6. Size:306K renesas
2sc6123-z.pdf
2SC6123 R07DS0329JJ0100Rev.1.00 2011.04.15 2SC6123 VCE(sat) hFE NPN OAFA DC/DC hFE
Otros transistores... 2N3200
, 2N3201
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, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
