2SC6120 Datasheet and Replacement

2SC6120FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION UnitmmOUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCEsat. 0.425 1.25 0.425FEATURE High collector current ICMAX=600mA Low collector to emitter saturation voltage VCE

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mmDC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector

2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit: mmHigh Voltage Amplifier Applications High voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 800 VCollector-emitter voltage VCEO 800 VEmitter-base voltage VEBO 5 VCollector current IC 5

2SC6123 R07DS0329JJ0100Rev.1.00 2011.04.15 2SC6123 VCE(sat) hFE NPN OAFA DC/DC hFE

2SC6123 R07DS0329JJ0100Rev.1.00 2011.04.15 2SC6123 VCE(sat) hFE NPN OAFA DC/DC hFE