MJE15029G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE15029G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO220AB
Búsqueda de reemplazo de transistor bipolar MJE15029G
MJE15029G
Datasheet (PDF)
..1. Size:178K onsemi
mje15029g.pdf 
MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll
6.1. Size:223K onsemi
mje15028 mje15030 mje15029 mje15031.pdf
MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-
6.2. Size:172K cn sptech
mje15029.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15029DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = -0.5AT CDC current gain -: h = 40 (Min) @I = -3.0 AFE C: h = 20 (Min) @I = -4.0 AFE CComplement to Type MJE15028APPLICATIONSDesigned for use as highfre
6.3. Size:213K inchange semiconductor
mje15029.pdf
isc Silicon PNP Power Transistor MJE15029DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = -0.5AT CDC current gain -: h = 40 (Min) @I = -3.0 AFE C: h = 20 (Min) @I = -4.0 AFE CComplement to Type MJE15028Minimum Lot-to-Lot variations for robust deviceperformance and reliable ope
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