All Transistors. MJE15029G Datasheet

 

MJE15029G Datasheet and Replacement


   Type Designator: MJE15029G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220AB
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MJE15029G Datasheet (PDF)

 ..1. Size:178K  onsemi
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MJE15029G

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

 6.1. Size:223K  onsemi
 mje15028 mje15030 mje15029 mje15031.pdf pdf_icon

MJE15029G

MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-

 6.2. Size:172K  cn sptech
 mje15029.pdf pdf_icon

MJE15029G

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15029DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = -0.5AT CDC current gain -: h = 40 (Min) @I = -3.0 AFE C: h = 20 (Min) @I = -4.0 AFE CComplement to Type MJE15028APPLICATIONSDesigned for use as highfre

 6.3. Size:213K  inchange semiconductor
 mje15029.pdf pdf_icon

MJE15029G

isc Silicon PNP Power Transistor MJE15029DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = -0.5AT CDC current gain -: h = 40 (Min) @I = -3.0 AFE C: h = 20 (Min) @I = -4.0 AFE CComplement to Type MJE15028Minimum Lot-to-Lot variations for robust deviceperformance and reliable ope

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2T6551 | 2SD897A | KT3140D | BTN2222A3 | ECG368 | AD541 | RCA6340

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