MJE15029G datasheet, аналоги, основные параметры

Наименование производителя: MJE15029G  📄📄 

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 50 W

Макcимально допустимое напряжение коллектор-база (Ucb): 120 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 30 MHz

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: TO220AB

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MJE15029G даташит

 ..1. Size:178K  onsemi
 mje15029g.pdf pdf_icon

MJE15029G

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll

 6.1. Size:223K  onsemi
 mje15028 mje15030 mje15029 mje15031.pdf pdf_icon

MJE15029G

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* 120-

 6.2. Size:172K  cn sptech
 mje15029.pdf pdf_icon

MJE15029G

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15029 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = -0.5A T C DC current gain - h = 40 (Min) @I = -3.0 A FE C h = 20 (Min) @I = -4.0 A FE C Complement to Type MJE15028 APPLICATIONS Designed for use as high fre

 6.3. Size:213K  inchange semiconductor
 mje15029.pdf pdf_icon

MJE15029G

isc Silicon PNP Power Transistor MJE15029 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = -0.5A T C DC current gain - h = 40 (Min) @I = -3.0 A FE C h = 20 (Min) @I = -4.0 A FE C Complement to Type MJE15028 Minimum Lot-to-Lot variations for robust device performance and reliable ope

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Другие транзисторы: MJE13009X8, MJE13009X9, MJE13009Z7, MJE13009Z8, MJE13009Z9, MJE13011, MJE1320-ISC, MJE15028G, MJE340, MJE15030G, MJE15031G, MJE15032G, MJE15033G, MJE15034G, MJE15035G, MJE16014, MJE170G