MJE15032G Todos los transistores

 ..1. Size:166K  onsemi
 mje15032g.pdf

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd

 6.1. Size:141K  motorola
 mje15032.pdf

Order this document MOTOROLA by MJE15032/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15032 Complementary Silicon Plastic PNP Power Transistors * MJE15033 . . . designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc *Motorola Preferred Device hFE = 10 (Min) @ IC = 2.0 Adc Collector Emitter Su

 6.2. Size:89K  onsemi
 mje15032-33.pdf

ON Semiconductort NPN Complementary Silicon Plastic * MJE15032 Power Transistors PNP . . . designed for use as high frequency drivers in audio amplifiers. * MJE15033 DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc *ON Semiconductor Preferred Device Collector Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M

 6.3. Size:75K  onsemi
 mje15032 mje15033.pdf

MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

 6.4. Size:280K  cdil
 mje15032 33.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPN MJE15033 PNP TO - 220 Plastic Package High - Frequency Drivers in Audio Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector- Base Voltage VCBO 250 V Collector- Emitter Voltage VCEO 250 V 5 Emitter- Base Voltage VEBO V 8

 6.5. Size:611K  jilin sino
 mje15032 mje15033.pdf

 6.6. Size:172K  cn sptech
 mje15032.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = 0.5 A FE C h = 10 (Min) @I = 2.0 A FE C Complement to Type MJE15033 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) S

 6.7. Size:132K  inchange semiconductor
 mje15032.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min) DC current gain - hFE = 50 (Min) @IC= 0.5 A hFE = 10 (Min) @IC= 2.0 A Complement to Type MJE15033 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RA