MJE15032G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJE15032 (NPN),MJE15033 (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 AmpereshFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 250 Vd

Order this documentMOTOROLAby MJE15032/DSEMICONDUCTOR TECHNICAL DATANPN*MJE15032Complementary Silicon PlasticPNPPower Transistors*MJE15033. . . designed for use as highfrequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 AmpereshFE = 50 (Min) @ IC = 0.5 Adc*Motorola Preferred DevicehFE = 10 (Min) @ IC = 2.0 Adc CollectorEmitter Su

ON SemiconductortNPNComplementary Silicon Plastic*MJE15032Power TransistorsPNP. . . designed for use as highfrequency drivers in audio amplifiers.*MJE15033 DC Current Gain Specified to 5.0 AmpereshFE = 50 (Min) @ IC = 0.5 Adc= 10 (Min) @ IC = 2.0 Adc*ON Semiconductor Preferred Device CollectorEmitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M

MJE15032 (NPN),MJE15033 (PNP)Preferred DevicesComplementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 Amperes8.0 AMPEREShFE = 70 (Min) @ IC = 0.5 AdcPOWER TRANSISTORS= 10 (Min) @ IC = 2.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPNMJE15033 PNPTO - 220Plastic PackageHigh - Frequency Drivers in Audio AmplifierABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector- Base Voltage VCBO 250 VCollector- Emitter Voltage VCEO 250 V5Emitter- Base Voltage VEBO V8

Complementary NPN-PNP Power Bipolar Transistor RMJE15032(NPN) MJE15033(PNP) APPLICATIONS High frequency drivers in audio amplifiers FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEO NPN-PNP Complementary NPN-PNP

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15032DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = 0.5 AFE C: h = 10 (Min) @I = 2.0 AFE CComplement to Type MJE15033APPLICATIONSDesigned for use as highfrequency drivers in audioamplifiers.ABSOLUTE MAXIMUM RATINGS (Ta=25)S

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) DC current gain - : hFE = 50 (Min) @IC= 0.5 A : hFE = 10 (Min) @IC= 2.0 A Complement to Type MJE15033 APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RA