Справочник транзисторов. MJE15032G

 

Биполярный транзистор MJE15032G Даташит. Аналоги


   Наименование производителя: MJE15032G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 30 MHz
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO220
     - подбор биполярного транзистора по параметрам

 

MJE15032G Datasheet (PDF)

 ..1. Size:166K  onsemi
mje15032g.pdfpdf_icon

MJE15032G

MJE15032 (NPN),MJE15033 (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 AmpereshFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 250 Vd

 6.1. Size:141K  motorola
mje15032.pdfpdf_icon

MJE15032G

Order this documentMOTOROLAby MJE15032/DSEMICONDUCTOR TECHNICAL DATANPN*MJE15032Complementary Silicon PlasticPNPPower Transistors*MJE15033. . . designed for use as highfrequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 AmpereshFE = 50 (Min) @ IC = 0.5 Adc*Motorola Preferred DevicehFE = 10 (Min) @ IC = 2.0 Adc CollectorEmitter Su

 6.2. Size:89K  onsemi
mje15032-33.pdfpdf_icon

MJE15032G

ON SemiconductortNPNComplementary Silicon Plastic*MJE15032Power TransistorsPNP. . . designed for use as highfrequency drivers in audio amplifiers.*MJE15033 DC Current Gain Specified to 5.0 AmpereshFE = 50 (Min) @ IC = 0.5 Adc= 10 (Min) @ IC = 2.0 Adc*ON Semiconductor Preferred Device CollectorEmitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M

 6.3. Size:75K  onsemi
mje15032 mje15033.pdfpdf_icon

MJE15032G

MJE15032 (NPN),MJE15033 (PNP)Preferred DevicesComplementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 Amperes8.0 AMPEREShFE = 70 (Min) @ IC = 0.5 AdcPOWER TRANSISTORS= 10 (Min) @ IC = 2.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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