MJE15032G datasheet, аналоги, основные параметры

Наименование производителя: MJE15032G  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 50 W

Макcимально допустимое напряжение коллектор-база (Ucb): 250 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 30 MHz

Статический коэффициент передачи тока (hFE): 70

Корпус транзистора: TO220

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MJE15032G даташит

 ..1. Size:166K  onsemi
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MJE15032G

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd

 6.1. Size:141K  motorola
mje15032.pdfpdf_icon

MJE15032G

Order this document MOTOROLA by MJE15032/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15032 Complementary Silicon Plastic PNP Power Transistors * MJE15033 . . . designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc *Motorola Preferred Device hFE = 10 (Min) @ IC = 2.0 Adc Collector Emitter Su

 6.2. Size:89K  onsemi
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MJE15032G

ON Semiconductort NPN Complementary Silicon Plastic * MJE15032 Power Transistors PNP . . . designed for use as high frequency drivers in audio amplifiers. * MJE15033 DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc *ON Semiconductor Preferred Device Collector Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M

 6.3. Size:75K  onsemi
mje15032 mje15033.pdfpdf_icon

MJE15032G

MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

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