MJE15032G datasheet, аналоги, основные параметры
Наименование производителя: MJE15032G 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 30 MHz
Статический коэффициент передачи тока (hFE): 70
Корпус транзистора: TO220
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Аналоги (замена) для MJE15032G
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MJE15032G даташит
mje15032g.pdf
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd
mje15032.pdf
Order this document MOTOROLA by MJE15032/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15032 Complementary Silicon Plastic PNP Power Transistors * MJE15033 . . . designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc *Motorola Preferred Device hFE = 10 (Min) @ IC = 2.0 Adc Collector Emitter Su
mje15032-33.pdf
ON Semiconductort NPN Complementary Silicon Plastic * MJE15032 Power Transistors PNP . . . designed for use as high frequency drivers in audio amplifiers. * MJE15033 DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc *ON Semiconductor Preferred Device Collector Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M
mje15032 mje15033.pdf
MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -
Другие транзисторы: MJE13009Z8, MJE13009Z9, MJE13011, MJE1320-ISC, MJE15028G, MJE15029G, MJE15030G, MJE15031G, A940, MJE15033G, MJE15034G, MJE15035G, MJE16014, MJE170G, MJE171G, MJE172G, MJE18004G
History: KDY24
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