MJE15032G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE15032G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220
MJE15032G Transistor Equivalent Substitute - Cross-Reference Search
MJE15032G Datasheet (PDF)
mje15032g.pdf
MJE15032 (NPN),MJE15033 (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 AmpereshFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 250 Vd
mje15032.pdf
Order this documentMOTOROLAby MJE15032/DSEMICONDUCTOR TECHNICAL DATANPN*MJE15032Complementary Silicon PlasticPNPPower Transistors*MJE15033. . . designed for use as highfrequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 AmpereshFE = 50 (Min) @ IC = 0.5 Adc*Motorola Preferred DevicehFE = 10 (Min) @ IC = 2.0 Adc CollectorEmitter Su
mje15032-33.pdf
ON SemiconductortNPNComplementary Silicon Plastic*MJE15032Power TransistorsPNP. . . designed for use as highfrequency drivers in audio amplifiers.*MJE15033 DC Current Gain Specified to 5.0 AmpereshFE = 50 (Min) @ IC = 0.5 Adc= 10 (Min) @ IC = 2.0 Adc*ON Semiconductor Preferred Device CollectorEmitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M
mje15032 mje15033.pdf
MJE15032 (NPN),MJE15033 (PNP)Preferred DevicesComplementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 Amperes8.0 AMPEREShFE = 70 (Min) @ IC = 0.5 AdcPOWER TRANSISTORS= 10 (Min) @ IC = 2.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -
mje15032 33.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPNMJE15033 PNPTO - 220Plastic PackageHigh - Frequency Drivers in Audio AmplifierABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector- Base Voltage VCBO 250 VCollector- Emitter Voltage VCEO 250 V5Emitter- Base Voltage VEBO V8
mje15032 mje15033.pdf
Complementary NPN-PNP Power Bipolar Transistor RMJE15032(NPN) MJE15033(PNP) APPLICATIONS High frequency drivers in audio amplifiers FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEO NPN-PNP Complementary NPN-PNP
mje15032.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15032DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = 0.5 AFE C: h = 10 (Min) @I = 2.0 AFE CComplement to Type MJE15033APPLICATIONSDesigned for use as highfrequency drivers in audioamplifiers.ABSOLUTE MAXIMUM RATINGS (Ta=25)S
mje15032.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) DC current gain - : hFE = 50 (Min) @IC= 0.5 A : hFE = 10 (Min) @IC= 2.0 A Complement to Type MJE15033 APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
