MJE15033G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJE15032 (NPN),MJE15033 (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 AmpereshFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 250 Vd

MJE15032 (NPN),MJE15033 (PNP)Preferred DevicesComplementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 Amperes8.0 AMPEREShFE = 70 (Min) @ IC = 0.5 AdcPOWER TRANSISTORS= 10 (Min) @ IC = 2.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

Complementary NPN-PNP Power Bipolar Transistor RMJE15032(NPN) MJE15033(PNP) APPLICATIONS High frequency drivers in audio amplifiers FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEO NPN-PNP Complementary NPN-PNP

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15033DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = -0.5 AFE C: h = 10 (Min) @I = -2.0 AFE CComplement to Type MJE15032APPLICATIONSDesigned for use as highfrequency drivers in audioamplifiers.ABSOLUTE MAXIMUM RATINGS (Ta=25)

isc Silicon PNP Power Transistor MJE15033DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = -0.5 AFE C: h = 10 (Min) @I = -2.0 AFE CComplement to Type MJE15032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as highfrequency drivers in a