MJE15033G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE15033G 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO220
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MJE15033G datasheet
mje15033g.pdf
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd
mje15032 mje15033.pdf
MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -
mje15033.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15033 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = -0.5 A FE C h = 10 (Min) @I = -2.0 A FE C Complement to Type MJE15032 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 )
Otros transistores... MJE13009Z9, MJE13011, MJE1320-ISC, MJE15028G, MJE15029G, MJE15030G, MJE15031G, MJE15032G, B772, MJE15034G, MJE15035G, MJE16014, MJE170G, MJE171G, MJE172G, MJE18004G, MJE18008G
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